Characterization and Modeling of SOI Varactors at Various Temperatures

IEEE Transactions on Electron Devices

Volumn 51, Issue 3, 2004, Pages 427-434

  Chen, Kun Ming ^a   Huang, Guo Wei ^a   Wang, Sheng Chun ^a   Yeh, Wen Kuan ^b   Fang, Yean Kuen ^c   Yang, Fu Liang ^d  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

BSIM3v3 model; Capacitance; MOS varactor; Quality factor; Silicon on insulator (SOI) CMOS process; Temperature

Indexed keywords

CAPACITANCE MEASUREMENT; CMOS INTEGRATED CIRCUITS; MOS DEVICES; Q FACTOR MEASUREMENT; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; THRESHOLD VOLTAGE;

BSIM3V3 MODEL; MOS VARACTORS;

VARACTORS;

EID: 1642372139     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.822585     Document Type: Article

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