Low voltage tunneling in ultra-thin oxides: a monitor for interface states and degradation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 731-734

  Ghetti, Andrea ^a   Sangiorgi, Enrico ^a   Bude, Jeff ^a   Sorsch, T W ^a   Weber, Gary ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; ELECTRON TUNNELING; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING; SUBSTRATES;

INTERFACE STATE; ULTRATHIN OXIDES;

MOS DEVICES;

EID: 0033352180     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)