Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 114, Issue 8, 2013, Pages

  Luong, T K P ^a   Dau, M T ^a   Zrir, M A ^a   Stoffel, M ^b   Le Thanh, V ^a   Petit, M ^a   Ghrib, A ^c   El Kurdi, M ^c   Boucaud, P ^c   Rinnert, H ^b   Murota, J ^d  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UNIVERSITÉ DE LORRAINE   (France)

^c UNIVERSITÉ PARIS SACLAY   (France)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON ADSORPTION; COMPOSITIONAL CHARACTERIZATION; HIGH-TEMPERATURE GROWTH; LOW TEMPERATURE GROWTH; SILICON TECHNOLOGIES; STRANSKI-KRASTANOV GROWTH; SUBSTRATE TEMPERATURE; THERMAL EXPANSION COEFFICIENTS;

GERMANIUM; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; TENSILE STRAIN; THERMAL EXPANSION;

EPITAXIAL GROWTH;

EID: 84883890231     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818945     Document Type: Article

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