Direct bandgap narrowing in Ge LED's on Si substrates

Optics Express

Volumn 21, Issue 2, 2013, Pages 2206-2211

  Oehme, Michael ^a   Gollhofer, Martin ^a   Widmann, Daniel ^a   Schmid, Marc ^a   Kaschel, Mathias ^a   Kasper, Erich ^a   Schulze, Jörg ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; ENERGY GAP; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SILICON;

BAND GAP NARROWING; BAND-GAP EMISSION; DOPING CONCENTRATION; DOPING DENSITIES; DOPING LEVELS; ELECTRICAL CURRENT; ELECTROLUMINESCENCE INTENSITY; EMISSION INTENSITY; EMISSION SHIFTS; LAYER STRUCTURES; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; N-TYPE DOPING; POWER EXPONENT; ROOM TEMPERATURE EMISSIONS; SI SUBSTRATES; SUPERLINEAR;

GERMANIUM;

GERMANIUM; SILICON;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; ILLUMINATION; MATERIALS TESTING; SEMICONDUCTOR;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GERMANIUM; LIGHTING; MATERIALS TESTING; SEMICONDUCTORS; SILICON;

MLCS; MLOWN;

EID: 84874024714     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.002206     Document Type: Article

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