A metastable (√3 × √3)R30° reconstruction of the Si(111) surface, induced by silicon adatoms

Surface Science

Volumn 369, Issue 1-3, 1996, Pages 85-90

  Le Thanh, Vinh ^a   Aubry Fortuna, Valérie ^a   Bouchier, Daniel ^a   Younsi, Abdelaziz ^a   Hincelin, Gérard ^a  

^a CNRS   (France)

Author keywords

Homoepitaxy; Hydrogen desorption; Nucleation; Phase transition; Silane; Silicon adatom; Step flow; Surface reconstruction

Indexed keywords

DESORPTION; EPITAXIAL GROWTH; FLUXES; HYDROGEN; NUCLEATION; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILANES; SURFACE STRUCTURE; THERMAL EFFECTS;

HOMOEPITAXY; SILANE FLUX; SILICON ADATOMS; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0030380779     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0039-6028(96)00879-5     Document Type: Article

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