A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Dong, Yuanwei ^a   Lin, Yiheng ^a   Li, Simon ^b   McCoy, Steve ^c   Xia, Guangrui ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b Crosslight Software Inc   (Canada)

^c Mattson Technology Canada   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL DATA; FURNACE ANNEALING; GE CONTENT; INTRINSIC DIFFUSIVITY; MODEL VERIFICATION; NON-ISOTHERMAL ANNEALING; PROCESS SIMULATION TOOLS; RELAXED SIGE; SELF-DIFFUSIVITY; TEMPERATURE RANGE; THERMAL-ANNEALING;

C (PROGRAMMING LANGUAGE); RAPID THERMAL ANNEALING; SILICON ALLOYS;

GERMANIUM;

EID: 84863238056     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3687923     Document Type: Article

References (50)

1. D. Zhang, T. White, and B. Y. Nguyen, IEEE Trans. Electron Devices 53, 3020 (2006). 10.1109/TED.2006.885534
2. L. Gomez, C. N. Chleirigh, P. Hashemi, and J. L. Hoyt, IEEE Electron Device Lett. 31, 782 (2010). 10.1109/LED.2010.2050574
3. K. K. Bhuwalka, M. Born, M. Schindler, M. Schmidt, T. Sulima, and I. Eisele, Jpn. J. Appl. Phys. 45, 3106 (2006). 10.1143/JJAP.45.3106
4. P. See and D. J. Paul, IEEE Electron Device Lett. 22, 582 (2001). 10.1109/55.974584
5. Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, Nature 437, 1334 (2005). 10.1038/nature04204
6. J. F. Liu, X. C. Sun, R. C. Aguilera, L. C. Kimerling, and J. Michel, Opt. Lett. 35, 679 (2010). 10.1364/OL.35.000679
7. G. Xia, J. L. Hoyt, and M. Canonico, J. Appl. Phys. 101, 044901 (2007). 10.1063/1.2430904
8. G. Xia, H. M. Nayfeh, M. L. Lee, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, and J. L. Hoyt, IEEE Trans. Electron Devices 51, 2136 (2004). 10.1109/TED.2004.839116
9. J. Jung, S. F. Yu, O. O. Olubuyide, J. L. Hoyt, D. A. Antoniadis, M. L. Lee, and E. A. Fitzgerald, Appl. Phys. Lett. 84, 3319 (2004). 10.1063/1.1719275
10. G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, IEEE Photonics Technol. Lett. 16, 2547 (2004). 10.1109/LPT.2004.835631
11. J. Liu, personal communication (2010).
12. G. L. McVay and A. R. DuCharme, J. Appl. Phys. 44, 1409 (1973); 10.1063/1.1662371
13. G. L. McVay and A. R. DuCharme, Phys. Rev. B 9, 627 (1974). 10.1103/PhysRevB.9.627
14. N. R. Zangenberg, J. L. Hansen, J. Fage-Pederson, and A. N. Larsen, Phys. Rev. Lett. 87, 125901 (2001). 10.1103/PhysRevLett.87.125901
15. A. Strohm, T. Voss, W. Frank, J. Raisanen, and M. Dietrich, Physica B 308-310, 542 (2001); 10.1016/S0921-4526(01)00814-6
16. A. Strohm, T. Voss, W. Frank, P. Laitinen, and J. Raisanen, Z. Metallkd. 93, 737 (2002).
17. R. Kube, H. Bracht, J. L. Hansen, A. N. Larsen, E. E. Haller, S. Paul, and W. Lerch, Mater. Sci. Semicond. Process. 11, 378 (2008); 10.1016/j.mssp.2008.07.005
18. R. Kube, H. Bracht, J. L. Hansen, A. N. Larsen, E. E. Haller, S. Paul, and W. Lerch, J. Appl. Phys. 107, 073520 (2010). 10.1063/1.3380853
19. D. B. Aubertine and P. C. McIntyre, J. Appl. Phys. 97, 013531 (2005). 10.1063/1.1828240
20. N. Ozguven and P. C. McIntyre, Appl. Phys. Lett. 92, 181907 (2008). 10.1063/1.2917798
21. M. Meduna, J. Novak, G. Bauer, C. V. Falub, and D. Grutzmacher, Phys. Status Solidi A 205, 2441 (2008). 10.1002/pssa.v205:10
22. M. Meduna, O. Caha, M. Keplinger, J. Stangl, G. Bauer, G. Mussler, and D. Grutzmacher, Phys. Status Solidi A 206, 1775 (2009). 10.1002/pssa.v206:8
23. X. C. Liu and D. R. Leadley, J. Phys. D: Appl. Phys. 43, 505303 (2010). 10.1088/0022-3727/43/50/505303
24. M. Gavelle, E. M. Bazizi, E. Scheid, P. F. Fazzini, F. Cristiano, C. Armand, W. Lerch, S. Paul, Y. Campidelli, and A. Halimaoui, J. Appl. Phys. 104, 113524 (2008). 10.1063/1.3033378
25. R. Chen and S. T. Dunham, J. Vac. Sci. Technol. B 28, C1G8 (2010).
26. P. Castrillo, R. Pinacho, M. Jaraiz, and J. E. Rubio, J. Appl. Phys. 109, 103502 (2011). 10.1063/1.3581113
27. L. Witters, S. Takeoka, S. Yamaguchi, A. Hikavyy, D. Shamiryan, M. Cho, T. Chiarella, L. A. Ragnarsson, R. Loo, C. Kerner, Y. Crabbe, J. Franco, J. Tseng, W. E. Wang, E. Rohr, T. Schram, O. Richard, H. Bender, S. Biesemans, P. Absil, and T. Hoffmann, Symposium on VLSI Technology Digest of Technical Paper, Honolulu, HI, 15-18 July 2010 (IEEE, Honolulu, HI, 2010), p. 181.
28. M. Griglione, T. J. Anderson, Y. M. Haddara, M. E. Law, K. S. Jones, and A. V. D. Bogaard, J. Appl. Phys. 88, 1366 (2000). 10.1063/1.373825
29. N. E. B. Cowern, P. C. Zalm, P. V. D. Sluis, D. J. Gravesteijn, and W. B. D. Boer, Phys. Rev. Lett. 72, 2585 (1994). 10.1103/PhysRevLett.72.2585
30. N. E. B. Cowern, W. J. Kersten, R. C. M. De Kruif, J. G. M. Van Berkum, W. B. De Boer, D. J. Gravesteijn, and C. W. T. Bulle-Liewma, Fourth International Symposium on Process Physics and Modeling in Semiconductor Devices, Los Angeles, CA, 5-10 May 1996 (the Electrochemical Society, Inc., Pennington, NJ, 1996), p. 195.
31. B. Hollander, R. Butz, and S. Mantl, Phys. Rev. B 46, 6975 (1992). 10.1103/PhysRevB.46.6975
32. S. S. Iyer and F. K. Legoues, J. Appl. Phys. 65, 4693 (1989). 10.1063/1.343245
33. J. M. Baribeau, J. Appl. Phys. 74, 3805 (1993). 10.1063/1.355290
34. J. M. Baribeau, J. Vac. Sci. Technol. B 16, 1568 (1998). 10.1116/1.589941
35. S. M. Prokes and K. L. Wang, Appl. Phys. Lett. 56, 2628 (1990). 10.1063/1.102858
36. S. M. Prokes, O. J. Glembocki, and D. J. Godbey, Appl. Phys. Lett. 60, 1087 (1992). 10.1063/1.107455
37. R. Schorer, E. Friess, K. Eberl, and G. Abstreiter, Phys. Rev. B 44, 1772 (1991). 10.1103/PhysRevB.44.1772
38. P. Boucaud, L. Wu, C. Guedj, F. H. Julien, I. Sajnes, Y. Campidelli, and L. Garchery, J. Appl. Phys. 80, 1414 (1996). 10.1063/1.362939
39. M. E. Glicksman, Diffusion in Solid: Field Theory, Solid-state Principles and Applications (Wiley, New York, 1999), pp. 309-329.
40. R. DeHoff, Thermodynamics in Materials Science (CRC, New York, 2006), p. 232.
41. L. S. Darken, Trans. AIME 175, 184 (1948).
42. D. Shaw, Phys. Status Solidi B 72, 11 (1975). 10.1002/(ISSN)1521-3951
43. R. J. Borg and G. J. Dienes, An Introduction to Solid State Diffusion (Academic, San Diego, 1988), pp. 53-73.
44. V. T. Bublik, S. S. Gorelik, A. A. Zaitsev, and A. Y. Polyakov, Phys. Status Solidi B 66, 427 (1974). 10.1002/(ISSN)1521-3951
45. tsuprem-4, version 2007.12 (Synopsys, Inc., Mountain View, CA, 2007).
46. Csuprem, version 2011 (Crosslight Software Inc., Burnaby, BC, 2011).
47. J. Parsons, R. J. H. Morris, D. B. Leadley, E. H. C. Parker, D. J. F. Fulgoni, and L. J. Nash, Appl. Phys. Lett. 93, 072108 (2008). 10.1063/1.2975188
48. S. B. Samavedam, W. J. Taylor, J. M. Grant, J. A. Smith, P. J. Tobin, A. Dip, A. M. Phillips, and R. Liu, J. Vac. Sci. Technol. B 17, 1424 (1999). 10.1116/1.590771
49. G. Xia and J. L. Hoyt, Appl. Phys. Lett. 96, 122107 (2010). 10.1063/1.3313949
50. R. W. Olesinski and G. J. Abbaschian, Bull. Alloy Phase Diagrams 5, 180 (1984). 10.1007/BF02868957