UHV-CVD heteroepitaxial growth of Si1-xGex alloys on Si(100) using silane and germane

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 59-63

  Vinh, Le Thanh ^a   Aubry Fortuna, V ^a   Zheng, Y ^b   Bouchier, D ^a   Guedj, C ^a   Hincelin, G ^a  

^a CNRS   (France)

^b UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

Author keywords

Chemical vapour deposition; Epitaxy; Germanium; Silane

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILANES;

GERMANE; HETEROEPITAXIAL GROWTH; HETEROSTRUCTURES; STRAIN RELAXATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031072127     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09331-5     Document Type: Article

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