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Volumn 94, Issue 19, 2009, Pages

Enhanced photoluminescence of heavily n -doped germanium

(9) El Kurdi, M a Kociniewski, T a Ngo, T P a Boulmer, J a Dbarre D a Boucaud, P a Damlencourt, J F b Kermarrec, O c Bensahel, D c

a CNRS (France)

b CEA LETI (France)

c STMICROELECTRONICS (France)

Author keywords

[No Author keywords available]

Indexed keywords

1550 NM; DIRECT BAND GAP; DONOR CONCENTRATIONS; DOPANT CONCENTRATIONS; DOPING EFFECTS; ELECTRON DISTRIBUTIONS; ENHANCEMENT FACTOR; GAS IMMERSION LASER DOPING; GE ON INSULATORS; N-DOPED; PHOTOLUMINESCENCE SIGNALS; ROOM TEMPERATURE; SPONTANEOUS EMISSION SPECTRUM; UNDOPED MATERIAL;

DOPING (ADDITIVES); ELECTRON MOBILITY; EMISSION SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION;

GERMANIUM;

EID: 67049088096 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3138155 Document Type: Article

Times cited : (130)

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