Direct band gap luminescence from Ge on Si pin diodes

Frontiers of Optoelectronics

Volumn 5, Issue 3, 2012, Pages 256-260

  Kasper, E ^a   Oehme, M ^a   Werner, J ^a   Aguirov, T ^b   Kittler, M ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

direct band gap; electroluminescence (EL); germanium (Ge); photoluminescence (PL)

Indexed keywords

EID: 84869171091     PISSN: 20952759     EISSN: 20952767     Source Type: Journal    
DOI: 10.1007/s12200-012-0235-4     Document Type: Article

References (20)

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