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Applied Physics Letters

Volumn 98, Issue 6, 2011, Pages

Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

(7) Werner, J a Oehme, M a Schmid, M a Kaschel, M a Schirmer, A a Kasper, E a Schulze, J a

a UNIVERSITY OF STUTTGART (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP REDUCTION; GE DETECTORS; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; MESA STRUCTURE; P-I-N PHOTODETECTORS; PIN DIODE; RESPONSIVITY; VERY LOW TEMPERATURES;

DIODES; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; SURFACE SEGREGATION; TIN;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79951795696 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3555439 Document Type: Article

Times cited : (192)

References (18)

1
- 79951800103
- (Elsevier Science, Amsterdam), Vol.
- E. Kasper and E. H. C. Parker, Proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy (Elsevier Science, Amsterdam, 1990), Vol. 183-184.
- (1990) Proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy , vol.183-184
- Kasper, E.¹ Parker, E.H.C.²

2
- 54849432664
- 0031-8965, 10.1002/pssa.200723302
- B. Jalali, Phys. Status Solidi A 0031-8965 205, 213 (2008). 10.1002/pssa.200723302
- (2008) Phys. Status Solidi A , vol.205 , pp. 213
- Jalali, B.¹

3
- 0004040706
- (Academic, New York)
- R. F. Potter, Germanium (Ge), Handbook of Optical Constants of Solids II (Academic, New York, 1985), p. 465.
- (1985) Germanium (Ge), Handbook of Optical Constants of Solids II , pp. 465
- Potter, R.F.¹

4
- 63149144424
- 10.1149/1.2986813
- M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, ECS Transactions 16, 563 (2008). 10.1149/1.2986813
- (2008) ECS Transactions , vol.16 , pp. 563
- Morse, M.¹ Dosunmu, O.² Yin, T.³ Kang, Y.⁴ Liu, H.D.⁵ Sarid, G.⁶ Ginsburg, E.⁷ Cohen, R.⁸ Litski, S.⁹ Zadka, M.¹⁰

5
- 28444450825
- Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 μm operation
- DOI 10.1063/1.2139837, 231109
- M. Rouvìre, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, and S. Laval, Appl. Phys. Lett. 0003-6951 87, 231109 (2005). 10.1063/1.2139837 (Pubitemid 41741041)
- (2005) Applied Physics Letters , vol.87 , Issue.23 , pp. 1-3
- Rouvire, M.¹ Vivien, L.² Le Roux, X.³ Mangeney, J.⁴ Crozat, P.⁵ Hoarau, C.⁶ Cassan, E.⁷ Pascal, D.⁸ Laval, S.⁹ Fdli, J.-M.¹⁰ Damlencourt, J.-F.¹¹ Hartmann, J.M.¹² Kolev, S.¹³

6
- 12344320372
- High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation
- DOI 10.1109/LPT.2004.836917
- O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, and M. S. Unlu, IEEE Photonics Technol. Lett. 1041-1135 17, 175 (2005). 10.1109/LPT.2004.836917 (Pubitemid 40118993)
- (2005) IEEE Photonics Technology Letters , vol.17 , Issue.1 , pp. 175-177
- Dosunmu, O.I.¹ Cannon, D.D.² Emsley, M.K.³ Kimerling, L.C.⁴ Unlu, M.S.⁵

7
- 67649574247
- 1041-1135, 10.1109/LPT.2009.2020510
- S. Klinger, M. Berroth, M. Kaschel, M. Oehme, and E. Kasper, IEEE Photonics Technol. Lett. 1041-1135 21, 920 (2009). 10.1109/LPT.2009.2020510
- (2009) IEEE Photonics Technol. Lett. , vol.21 , pp. 920
- Klinger, S.¹ Berroth, M.² Kaschel, M.³ Oehme, M.⁴ Kasper, E.⁵

8
- 33845654307
- The past, present, and future of silicon photonics
- DOI 10.1109/JSTQE.2006.883151
- R. Soref, IEEE J. Sel. Top. Quantum Electron. 1077-260X 12, 1678 (2006). 10.1109/JSTQE.2006.883151 (Pubitemid 44956141)
- (2006) IEEE Journal on Selected Topics in Quantum Electronics , vol.12 , Issue.6 , pp. 1678-1687
- Soref, R.¹

9
- 0001415777
- 0022-0248, 10.1016/0022-0248(81)90506-6
- R. F. C. Farrow, D. S. Robertson, G. M. Williams, A. G. Cullis, G. R. Jones, I. M. Young, and P. N. J. Dennis, J. Cryst. Growth 0022-0248 54, 507 (1981). 10.1016/0022-0248(81)90506-6
- (1981) J. Cryst. Growth , vol.54 , pp. 507
- Farrow, R.F.C.¹ Robertson, D.S.² Williams, G.M.³ Cullis, A.G.⁴ Jones, G.R.⁵ Young, I.M.⁶ Dennis, P.N.J.⁷

10
- 21544457242
- 0003-6951, 10.1063/1.104264
- W. Wegscheider, K. Eberl, U. Menczigar, and G. Abstreiter, Appl. Phys. Lett. 0003-6951 57, 875 (1990). 10.1063/1.104264
- (1990) Appl. Phys. Lett. , vol.57 , pp. 875
- Wegscheider, W.¹ Eberl, K.² Menczigar, U.³ Abstreiter, G.⁴

11
- 0344549502
- 0021-9606, 10.1063/1.1743083
- C. D. Thurmond, F. A. Trumbore, and M. Kowalchik, J. Chem. Phys. 0021-9606 25, 799 (1956). 10.1063/1.1743083
- (1956) J. Chem. Phys. , vol.25 , pp. 799
- Thurmond, C.D.¹ Trumbore, F.A.² Kowalchik, M.³

12
- 70349675893
- 0003-6951, 10.1063/1.3238327
- J. Mathews, R. Roucka, J. Xie, S. -Q. Yu, J. Menendez, and J. Kouvetakis, Appl. Phys. Lett. 0003-6951 95, 133506 (2009). 10.1063/1.3238327
- (2009) Appl. Phys. Lett. , vol.95 , pp. 133506
- Mathews, J.¹ Roucka, R.² Xie, J.³ Yu, S.-Q.⁴ Menendez, J.⁵ Kouvetakis, J.⁶

13
- 73649132282
- 0040-6090, 10.1016/j.tsf.2009.10.096
- J. Werner, M. Oehme, E. Kasper, and J. Schulze, Thin Solid Films 0040-6090 518, S234 (2010). 10.1016/j.tsf.2009.10.096
- (2010) Thin Solid Films , vol.518 , pp. 234
- Werner, J.¹ Oehme, M.² Kasper, E.³ Schulze, J.⁴

14
- 79951808416
- private communication (10 November)
- G. Bilger, private communication (10 November 2010).
- (2010)
- Bilger, G.¹

15
- 73849105603
- 0013-4651, 10.1149/1.3261854
- M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze, J. Electrochem. Soc. 0013-4651 157, H144 (2010). 10.1149/1.3261854
- (2010) J. Electrochem. Soc. , vol.157 , pp. 144
- Oehme, M.¹ Kaschel, M.² Werner, J.³ Kirfel, O.⁴ Schmid, M.⁵ Bahouchi, B.⁶ Kasper, E.⁷ Schulze, J.⁸

16
- 54849427452
- 0040-6090, 10.1016/j.tsf.2008.08.062
- M. Oehme, J. Werner, M. Kaschel, O. Kirfel, and E. Kasper, Thin Solid Films 0040-6090 517, 137 (2008). 10.1016/j.tsf.2008.08.062
- (2008) Thin Solid Films , vol.517 , pp. 137
- Oehme, M.¹ Werner, J.² Kaschel, M.³ Kirfel, O.⁴ Kasper, E.⁵

17
- 53449084919
- 0022-0248, 10.1016/j.jcrysgro.2008.08.018
- M. Oehme, J. Werner, and E. Kasper, J. Cryst. Growth 0022-0248 310, 4531 (2008). 10.1016/j.jcrysgro.2008.08.018
- (2008) J. Cryst. Growth , vol.310 , pp. 4531
- Oehme, M.¹ Werner, J.² Kasper, E.³

18
- 23844495530
- Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth
- DOI 10.1109/LPT.2005.848546
- M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, IEEE Photonics Technol. Lett. 1041-1135 17, 1510 (2005). 10.1109/LPT.2005.848546 (Pubitemid 41158442)
- (2005) IEEE Photonics Technology Letters , vol.17 , Issue.7 , pp. 1510-1512
- Jutzi, M.¹ Berroth, M.² Wohl, G.³ Oehme, M.⁴ Kasper, E.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.