Intermetallic compound layer growth between SnAgCu solder and Cu substrate in electronic packaging

Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 9, 2013, Pages 3249-3254

  Zhang, Liang ^a,b   Fan, Xi Ying ^a   He, Cheng Wen ^a   Guo, Yong Huan ^a  

^a JIANGSU NORMAL UNIVERSITY   (China)

^b JIANGSU UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPARENT ACTIVATION ENERGY; COPPER SUBSTRATES; ELECTRONIC PACKAGING; INTERMETALLIC COMPOUND LAYER GROWTH; REFLOW--SOLDERING; SINGLE LAYER; SNAGCU SOLDER; SOLID-STATE ISOTHERMAL AGING;

ACTIVATION ENERGY; COPPER COMPOUNDS; ELECTRONICS PACKAGING; FLIP CHIP DEVICES; INTERMETALLICS; SOLDERING; SOLDERING ALLOYS;

TIN;

EID: 84882728998     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-013-1236-9     Document Type: Article

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