Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

Journal of Applied Physics

Volumn 114, Issue 4, 2013, Pages

  Guo, Pengfei ^a   Han, Genquan ^a   Gong, Xiao ^a   Liu, Bin ^a   Yang, Yue ^a   Wang, Wei ^a   Zhou, Qian ^a   Pan, Jisheng ^b   Zhang, Zheng ^b   Soon Tok, Eng ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SCATTERING; ELECTRICAL CHARACTERISTIC; INTRINSIC TRANSCONDUCTANCE; LOW TEMPERATURES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MID-GAP INTERFACES; PASSIVATION LAYER; SUBTHRESHOLD SWING;

GATE DIELECTRICS; MOSFET DEVICES; PASSIVATION; SILICON; TIN;

GERMANIUM;

EID: 84882410694     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816695     Document Type: Article

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