Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 97-98

  Han, Genquan ^a   Su, Shaojian ^b   Wang, Lanxiang ^a   Wang, Wei ^a   Gong, Xiao ^a   Yang, Yue ^a   Ivana, ^a   Guo, Pengfei ^a   Guo, Cheng ^a   Zhang, Guangze ^b   Pan, Jisheng ^c   Zhang, Zheng ^c   Xue, Chunlai ^b   Cheng, Buwen ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; FORWARD BIAS; HIGH QUALITY; INTERFACIAL LAYER; JUNCTION FORMATION; LOW TEMPERATURES; MOSFETS; N-CHANNEL; NMOSFET; NMOSFETS;

GERMANIUM; TIN;

MOSFET DEVICES;

EID: 84866556393     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242479     Document Type: Conference Paper

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