High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Han, Genquan ^a   Su, Shaojian ^b   Zhan, Chunlei ^a   Zhou, Qian ^a   Yang, Yue ^a   Wang, Lanxiang ^a   Guo, Pengfei ^a   Wei, Wang ^b   Wong, Choun Pei ^c   Shen, Ze Xiang ^c   Cheng, Buwen ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL DEVICE; GATE STACKS; HIGH MOBILITY; MBE GROWTH; MOSFETS; P-MOSFETS; SURFACE PASSIVATION;

ELECTRON DEVICES; GERMANIUM; TIN;

MOSFET DEVICES;

EID: 84863027865     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131569     Document Type: Conference Paper

References (21)

1. Y.-C. Yeo et al., IEDM, p.753, 2000.
2. T. Tezuka et al., IEDM, p. 33.6.1, 2001.
3. C. O. Chui et al., IEDM, p.437, 2002.
4. T. Ghani et al., IEDM, p. 11.6.1, 2003.
5. A. Ritenour et al., IEDM, p.18.2.1, 2003.
6. M. Yang et al., IEDM, p.18.7.1, 2003.
7. O. Weber et al., IEDM, p.137, 2005.
8. D. Q. Kelly et al., IEDM, p.902, 2005.
9. P. Zimmerman et al., IEDM, p.26.1.1, 2006.
10. Y. Tateshita et al., IEDM, p.3.2.1, 2006.
11. T. Takahashi et al., IEDM, p.697, 2007.
12. M. Radosavljevic et al., IEDM, p.727, 2008.
13. P. Packan et al., IEDM, p.63, 2008.
14. N. Taoka et al., VLSI, p.80, 2009.
15. A. Nainani et al., IEDM, p.6.4.1, 2010.
16. R. Pillarisetty et al., IEDM, p.6.7.1, 2010.
17. R. Zhang et al., VLSI, p.56, 2011.
18. J. Tolle et al., APL, p.231924, 2006.
19. S. Su et al., JCG, p.43, 2011.
20. O. Nakatsuka et al., JJAP, p.04DA10, 2010.
21. G. Sun et al., JAP, p.033107, (2010).