1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeO x/Ge MOS interfaces fabricated by plasma post oxidation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Zhang, Rui ^a   Taoka, Noriyuki ^a   Huang, Po Chin ^a   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB SCATTERING; FIXED CHARGES; GATE STACKS; HIGH MOBILITY; MOS INTERFACE; NMOSFETS; P-MOSFETS; PEAK MOBILITY; POST-OXIDATION; ULTRA-THIN; UNIVERSAL RELATIONSHIP;

ELECTRON DEVICES; FABRICATION; LOGIC GATES; MOSFET DEVICES; SURFACE ROUGHNESS;

GERMANIUM;

EID: 84856994414     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131630     Document Type: Conference Paper

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