Effective work function modulation of TaN metal gate on Hf O2 after postmetallization annealing

Applied Physics Letters

Volumn 91, Issue 11, 2007, Pages

  Sugimoto, Youhei ^a   Kajiwara, Masanari ^a   Yamamoto, Keisuke ^a   Suehiro, Yuusaku ^a   Wang, Dong ^a   Nakashima, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; HAFNIUM COMPOUNDS; METALLIZING; TANTALUM COMPOUNDS; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BOND FORMATION; OXIDE FORMATION; POSTMETALLIZATION ANNEALING (PMA);

GATE DIELECTRICS;

EID: 34548662439     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2783472     Document Type: Article

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