High-mobility TaN/Al2O3 /Ge(111) n-MOSFETs with RTO-grown passivation layer

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1208-1210

  Jamil, M ^a   Oh, J ^b   Ramon, M ^a   Kaur, S ^a   Majhi, P ^b   Tutuc, E ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

Germanium; high dielectric; n MOSFET

Indexed keywords

DRAIN BIAS; DRIVE CURRENTS; EFFECTIVE MOBILITIES; GE SURFACES; HIGH ELECTRON MOBILITY; HIGH MOBILITY; INTERFACIAL LAYER; METAL GATE; MOSFETS; NMOSFET; NMOSFETS; PASSIVATION LAYER; RAPID THERMAL OXIDATION; SELF ALIGNED PROCESS; SI DEVICES; SI(1 0 0); SIMPLE APPROACH; SUBTHRESHOLD SLOPE;

DIELECTRIC MATERIALS; DRAIN CURRENT; GERMANIUM; PASSIVATION; REGENERATORS;

MOSFET DEVICES;

EID: 78049261917     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2071373     Document Type: Article

References (18)

1. Y. Kamata, "High-k/Ge MOSFETs for future nanoelectronics," Mater. Today, vol. 11, no. 1/2, pp. 30-38, Jan. 2008.
2. H. Shang, M. M. Frank, E. P. Gusev, L. O. Chu, S. W. Bedell, K. W. Guarini, and M. Leong, "Germanium channel MOSFETs: Opportunities and challenges," IBM J. Res. Develop., vol. 50, no. 4/5, pp. 377-386, Jul. 2006.
3. G. Hellings, J. Mitard, G. Eneman, B. De Jaeger, D. P. Brunco, D. Shamiryan, T. Vandeweyer, M. Meuris, M. M. Heyns, and K. De Meyer, "High performance 70-nm Germanium pMOSFETs with Boron LDD implants," IEEE Electron Device Lett., vol. 30, no. 1, pp. 88-90, Jan. 2009.
4. x/Si p-MOSFETs," Semicond. Sci. Technol., vol. 25, no. 4, p. 045 005, Apr. 2010.
5. y interlayer," IEEE Electron Device Lett., vol. 29, no. 10, pp. 1155-1158, Oct. 2008.
6. 3 Gamte dielectric," IEEE Trans. Electron Devices, vol. 56, no. 8, pp. 1681-1689, Aug. 2009.
7. H. Shang, K. Lee, P. Kozlowski, C. D'Emic, I. Babich, E. Sikorski, M. Ieong, H.-S. P. Wong, and W. Haensch, "Self-aligned N-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and Tungsten gate," IEEE Electron Device Lett., vol. 25, no. 3, pp. 135-137, Mar. 2004.
8. J. Oh, I. Ok, C.-Y. Kang, M. Jamil, S.-H. Lee, W.-Y. Loh, J. Huang, B. Sassman, L. Smith, S. Parthasarathy, B. E. Coss, W.-H. Choi, H.-D. Lee, M. Cho, S. K. Banerjee, P. Majhi, P. D. Kirsch, H.-H. Tseng, and R. Jammy, "Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses," in VLSI Symp. Tech. Dig., 2009, pp. 238-239.
9. 2/TiN gate stacks," IEEE Trans. Electron Devices, vol. 54, no. 6, pp. 1425-1430, Jun. 2007.
10. K. Martens, C. Chi On, G. Brammertz, B. De Jaeger, D. Kuzum, M. Meuris, M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes, and G. Roeseneken, "On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates," IEEE Trans. Electron Devices, vol. 55, no. 2, pp. 547-556, Feb. 2008.
11. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, "Fermi-level pinning and charge neutrality level in germanium," Appl. Phys. Lett., vol. 89, no. 25, pp. 252 110-1-252 110-3, Dec. 2006.
12. D. Kuzum, T. Krishnamohan, A. J. Pethe, A. K. Okyay, Y. Oshima, S. Yun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat, "Ge-interface engineering with ozone oxidation for low interface-state density," IEEE Electron Device Lett., vol. 29, no. 4, pp. 328-330, Apr. 2008.
13. 2 interface control with high-pressure oxidation for improving electrical characteristics," Appl. Phys. Express, vol. 2, no. 7, pp. 071 404-1-071 404-3, Jul. 2009.
14. D. Kuzum, T. Krishnamohan, Y. Sun, P. A. Pianetta, S-.P. Wong, and K. C. Saraswat, "Experimental demonstration of high mobility Ge NMOS," in IEDM Tech. Dig., 2009, pp. 453-456.
15. C. H. Lee, T. Nishimura, N. Saido, K. Nagashio, K. Kita, and A. Toriumi, "Record-high electron mobility in Ge n-MOSFETs exceeding Si universality," in IEDM Tech. Dig., 2009, pp. 457-460.
16. Y.-J. Yang, W. S. Ho, C.-F. Huang, S. T. Chang, and A. C. W. Liu, "Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 91, no. 10, p. 102 103, Sep. 2007.
17. K. Prabhakaran and T. Ogino, "Oxidation of Ge(100) and Ge(111) surfaces: An UPS and XPS study," Surf. Sci., vol. 325, no. 3, pp. 263-271, Mar. 1995.
18. G. Niu, J. D. Cressler, S. J. Mathew, and S. Subbanna, "A total resistance slope-based effective channel mobility extraction method for deep sub-micrometer CMOS technology," IEEE Trans. Electron Devices, vol. 46, no. 9, pp. 1912-1914, Sep. 1999.