Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 753-756

  Yeo, Yee Chia ^a   Lu, Qiang ^a   King, Tsu Jae ^a   Hu, Chenming ^a   Kawashima, Takayulu ^b   Oishi, Masato ^b   Mashiro, Supika ^b   Sakai, Junro ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Canon ANELVA Technix Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

ULTRA HIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHV-CVD);

MOSFET DEVICES;

EID: 0034452640     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904427     Document Type: Article

References (8)

1. Electron transport properties in Si/SiGe heterostructures: Measurements and device applications
2. Enhancement-mode quantum-well GeSi PMOS
3. High mobility Si and Ge structures
4. The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition
5. x alloys grown on Si(001) substrates
6. Fabrication and analysis of deep-submicron strained-Si N-MOSFET's
7. Predicting CMOS speed with gate oxide and voltage scaling and interconnect loading effects