GeSn technology: Extending the Ge electronics roadmap

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Gupta, Suyog ^a   Chen, Robert ^a   Magyari Kope, Blanka ^a   Lin, Hai ^a   Yang, Bin ^b   Nainani, Aneesh ^c   Nishi, Yoshio ^a   Harris, James S ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b GLOBALFOUDARIES   (United States)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY SYSTEM; BAND GAP ENGINEERING; CHANNEL MATERIALS; CMOS PROCESSING; CRYSTAL QUALITIES; FIRST-PRINCIPLES STUDY; HIGH QUALITY; LOW TEMPERATURE MBE; LOW THERMAL BUDGET; MATERIAL QUALITY; PERFORMANCE GAIN; PMOSFET; PROCESS FLOWS; ROADMAP; ROOM TEMPERATURE;

ALLOYING; ELECTRON DEVICES; ENERGY GAP; SURFACE CLEANING; TIN;

GERMANIUM;

EID: 84863051247     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131568     Document Type: Conference Paper

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