High mobility materials and novel device structures for high performance nanoscale MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Saraswat, Krishna C ^a   Chui, Chi On ^a   Kim, Donghyun ^a   Krishnamohan, Tejas ^a   Pethe, Abhijit ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; HIGH-MOBILITY; HIGH-MOBILITY MATERIALS; HIGHLY STRAINED; MOSFETS; NANOSCALE MOSFETS; NOVEL DEVICE STRUCTURES;

ELECTRON DEVICES; GERMANIUM; INDIUM ARSENIDE; SILICON;

MOSFET DEVICES;

EID: 46049110549     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346871     Document Type: Conference Paper

References (21)

1. M. Lundstrom, IEEE Electron Dev. Lett., vol. 18, p. 361, 1997.
2. T. Ghani et al., IEEE IEDM Tech. Dig., p. 978, 2003.
3. C. O. Chui et al., "Advanced Ge MOS Devices," Germanium Based Technologies: edited by C.Clayes and E. Simoen, Elsevier, 2006.
4. C. O. Chui et al., IEEE Trans. Electron Dev., vol. 53, p. 1501, 2006.
5. C. O. Chui et al., IEEE Trans. Electron Dev., vol. 53, p. 1509, 2006.
6. Y. H. Xie et al., J. Appl. Phys., vol. 73, p. 8364, 1993.
7. A. Nayfeh et al., IEEE Electron Dev. Lett., vol. 26, p. 311, 2005.
8. A. K. Okyay, et al., CLEO, Long Beach, CA., May 2006.
9. M. K. Hudait et al., J. Appl. Phys., vol. 83, p. 4454, 1998.
10. C. O. Chui et al., IEEEIEDM Tech. Dig., p. 437, 2002.
11. M. V. Fischetti et al., J. Appl. Phys., 80, 2234, (1996).
12. T. Krishnamohan et al., IEEE SSDM, 2006
13. D. Kim et al., IEEE SISPAD, Monterey, Sep 2006
14. T. Krishnamohan et al., IEEE Trans. Electron Dev., May 2006, p. 990.
15. T. Krishnamohan et al., IEEE Trans. Electron Dev., May 2006, p. 1000.
16. T. Krishnamohan et al., Proc. VLSI Tech. Symp., p. 182, 2006.
17. T. Krishnamohan et al., Proc. VLSI Tech. Symp., p. 82, 2005.
18. T. Krishnamohan et al., IEDM, 2006.
19. K. Martens, et al., IEEE Electron Dev. Lett., vol. 27, p. 405, May 2006
20. C. O. Chui et al., Appl. Phys. Lett., 87, 091909, (2005).
21. A. Pethe, et al., IEEE IEDM Digest, pp.619, 2005