The formation and characterisation of lanthanum oxide based Si/high-k/NiSi gate stacks by electron-beam evaporation: An examination of in-situ amorphous silicon capping and NiSi formation

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 145-156

  Hurley, P K ^a   Pijolat, M ^a   Cherkaoui, K ^a   Connor, E O ^a   O'Connell, D ^a   Negara, M A ^a   Lemme, M C ^b   Gottlob, H D B ^b   Schmidt, M ^b   Stegmaier, K ^a,c   Schwalke, U ^c   Hall, S ^d   Buiu, O ^d   Engstrom, O ^e   Newcomb, S B ^f  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b AMO GMBH   (Germany)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^d UNIVERSITY OF LIVERPOOL   (United Kingdom)

^e CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^f Newport   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON BEAMS; EVAPORATION; HIGH-K DIELECTRIC; INTERFACE STATES; LANTHANUM OXIDES; LOGIC GATES; NICKEL COMPOUNDS; PHYSICAL VAPOR DEPOSITION; SILICATES; SUBSTRATES;

ELECTRICAL SIGNATURES; ELECTRON BEAM EVAPORATION; EXTRACTED K-VALUE; INTERFACE STATE DENSITY; MOS STRUCTURE; SILICATE FORMATION; SILICON SUBSTRATE ORIENTATION; SILICON SUBSTRATES;

AMORPHOUS SILICON;

EID: 84880982156     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779556     Document Type: Conference Paper

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