Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 779-782

  Schram, T ^a   Ragnarsson, L A ^a   Lujan, G ^a,b   Deweerd, W ^a   Chen, J ^c   Tsai, W ^d   Henson, K ^a   Lander, R J P ^e   Hooker, J C ^e   Vertommen, J ^f   De Meyer, K ^a,b   Gendt, S De ^a   Heyns, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c TEXAS INSTRUMENTS   (United States)

^d INTEL CORPORATION   (United States)

^e PHILIPS RESEARCH LABORATORIES   (Netherlands)

^f Affiliate at IMEC for Lam Res Corp   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; POLYSILICON; SILICA; SWEEP CIRCUITS; TANTALUM COMPOUNDS; THERMODYNAMICS;

INTERFACE LAYER CONTROL; INVERSION CHARGE MOBILITY; OPERATING POWER; THERMAL BUDGET;

MOSFET DEVICES;

EID: 20044364930     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.050     Document Type: Conference Paper

References (6)

1. W. Tsai IEDM tech. digest 2003 311
2. De Gendt S et al., In: Proc. of SSICT, 2003, Osaka, Japan
3. S. Datta IEDM tech digest 2003 653
4. Lander RJP et al., In: Proc. of the 203rd meeting of the Electrochem. Soc., Paris, France, 2003;14:367
5. F. De Smedt J Electrochem Soc 146 1999 1873
6. R. Chau EDL 25 6 2004 408