Thermal-stability improvement of LaON thin film formed using nitrogen radicals

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1894-1897

  Sato, S ^a   Tachi, K ^a   Kakushima, K ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

EOT; Lanthanum oxide; Lanthanum oxynitride; MOSFET; Nitrogen radical

Indexed keywords

ANNEALING; ELECTRON MOBILITY; GATE DIELECTRICS; LANTHANUM COMPOUNDS; MOSFET DEVICES; NITRIDATION; THERMODYNAMIC STABILITY;

LANTHANUM OXIDE; LANTHANUM OXYNITRIDE; NITROGEN RADICAL; POST METARIZATION ANNEALING (PMA);

THIN FILMS;

EID: 34248674924     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.088     Document Type: Article

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