Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 70-73

  Schmidt, M ^a,c   Lemme, M C ^a   Kurz, H ^a   Witters, T ^b   Schram, T ^b   Cherkaoui, K ^c   Negara, A ^c   Hurley, P K ^c  

^a AMO GMBH   (Germany)

^b IMEC   (Belgium)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Forming gas annealing; High dielectric constant thin films; Interface states; Si(100) SiO2 HfO 2 TiN gate stacks

Indexed keywords

CAPACITANCE; DEFECTS; ENERGY GAP; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; MIS DEVICES; OXIDATION; RAPID THERMAL ANNEALING; THIN FILMS;

FORMING GAS ANNEALING (FGA); HIGH DIELECTRIC CONSTANT THIN FILMS; INTERFACE STATES; SI(100)/SIO2/HFO2/TIN GATE STACKS;

DIELECTRIC FILMS;

EID: 19944389275     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.023     Document Type: Conference Paper

References (17)

1. G.D. Wilk, R.M. Wallace, and J.M. Anthony Journal of Applied Physics 89 2001 5243
2. M. Houssa, J.L. Autran, A. Stesmans, and M.M. Heyns Applied Physics Letters 81 2002 4709
3. A. Stesmans, and V.V. Afanas'ev Appl. Phys. Lett. 80 2002 1957
4. Y.G. Fedorenko, L. Truong, V.V. Afanas'ev, and A. Stesmans Applied Physics Letters 84 2004 4771
5. P.K. Hurley, B.J. O'Sullivan, V.V. Afanas'ev, and A. Stesmans Electrochemical and Solid-State Letters 8 2 2005 G44 G46
6. B.J. O'Sullivan, P.K. Hurley, E. O'Connor, M. Modreanu, H. Roussel, C. Jimenez, C. Dubourdieu, M. Audier, and J.P. Sénateur Journal of the Electrochemical Sociey 151 2004 493 496
7. S. Mundani, F. Li, S.B. Samavedam, P.J. Tobin, C.S. Kang, R. Nieh, J.C. Lee, L.F. Register, and S.K. Banerjee IEEE Electron Device Letters 23 2002 728
8. P. Masson, J.L. Autran, M. Houssa, X. Garros, and C. Leroux Applied Physics Letters 81 2002 3392
9. A. Callegari, E. Cartier, M. Gribelyuk, H.F. Okorn-Schmidt, and T. Zabel J. Appl. Phys., 90 2001 6466
10. R.J. Carter, E. Cartier, A. Kerber, L. Pantisano, T. Schram, S. De Gendt, and M. Heyns Appl. Phys Lett 83 2003 533
11. B.J. O'Sullivan, P.K. Hurley, C. Leveugle, and J.H. Das Journal of Applied Physics 89 7 2001 3811
12. P.K. Hurley, B.J. O'Sullivan, F.N. Cubaynes, P.A. Stolk, F.P. Widdershoven, and J.H. Das Journal of the Electrochemical Society 149 2002 194 197
13. P.K. Hurley, A. Stesmans, V.V. Afanas'ev, B.J. O'Sullivan, and E. O'Callaghan Journal of Applied Physics 93 2003 3971 3973
14. K.S.K. Kwa, S. Chattopadhyay, N.D. Jankovic, S.H. Olsen, L.S. Driscoll, and A.G. O'Neill Semiconductor Science and Technology 18 2003 82
15. G. Apostolopoulos, G. Vellianitis, A. Dimoulas, J.C. Hooker, and T. Conard Appl. Phys. Lett. 84 2004 260
16. G.J. Gerardi, E.H. Poindexter, P.J. Caplan, and N.M. Johnson Appl. Phys. Lett. 49 1986 348
17. G.S. Lujan, T. Schram, G. Sjoblom, T. Witters, S. Kubicek, S. De Gendt, M. Heyns and K. De Meyer, Proc. of ESSDERC, p.325 (2004)