Model for determination of mid-gap states in amorphous metal oxides from thin film transistors

Journal of Applied Physics

Volumn 113, Issue 23, 2013, Pages

  Bubel, S ^a   Chabinyc, M L ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION MODES; AMORPHOUS ZINC OXIDES; CHARACTERISTIC ENERGY; CONDUCTION BAND ENERGY; DISORDERED MATERIALS; FIELD-DEPENDENT MOBILITY; METAL OXIDE SEMICONDUCTOR; QUATERNARY OXIDES;

AMORPHOUS ALLOYS; AMORPHOUS MATERIALS; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; GALLIUM ALLOYS; INDIUM ALLOYS; MOS DEVICES; SOLVENTS; THIN FILM TRANSISTORS; ZINC OXIDE;

TIN OXIDES;

EID: 84880807969     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4808457     Document Type: Article

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