A new analytical model for amorphous-silicon thin-film transistors including tail and deep states

Solid-State Electronics

Volumn 45, Issue 9, 2001, Pages 1525-1530

  Colalongo, L ^a  

^a UNIVERSITY OF BRESCIA   (Italy)

Author keywords

Amorphous silicon; Analytical model; Deep and tail states; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; ELECTRIC BREAKDOWN; ENERGY GAP; FERMI LEVEL; MATHEMATICAL MODELS; PERMITTIVITY; THRESHOLD VOLTAGE;

CHANNEL CONDUCTANCE;

THIN FILM TRANSISTORS;

EID: 0035447701     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00183-6     Document Type: Article

References (9)

1. Physical models for amorphous-silicon thin-film transistors and their implementation in a circuit simulation program
2. Static and dynamic analysis of amorphous-silicon field-effect transistors
3. Modeling of amorphous-silicon thin-film transistors for circuit simulation with SPICE
4. An analytical a-Si:H TFT dc/capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states
5. A charge-sheet model of the MOSFET
6. Analysis of amorphous-silicon devices
7. A long-channel MOSFET model
8. Analytical IGFET model including drift and diffusion currents
9. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistor