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Volumn 98, Issue 20, 2011, Pages

Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

(8) Lee, Sungsik a Ghaffarzadeh, Khashayar a Nathan, Arokia a Robertson, John b Jeon, Sanghun c Kim, Changjung c Song, I Hun c Chung, U In c

a UNIVERSITY COLLEGE LONDON (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; BAND TAIL; CARRIER-CONCENTRATION DEPENDENCE; CONDUCTION MECHANISM; ELECTRON CONDUCTION; FIELD-EFFECT MOBILITIES; POTENTIAL FLUCTUATIONS; POWER LAW; SLOPE CONTROL; SPATIAL COHERENCE LENGTH; TRAP-LIMITED CONDUCTION;

AMORPHOUS FILMS; CARRIER CONCENTRATION; CARRIER MOBILITY; SOLVENTS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS;

TRANSISTORS;

EID: 79957568495 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3589371 Document Type: Article

Times cited : (279)

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