Relationship between variable range hopping transport and carrier density of amorphous In 2O 3-10 wt. % ZnO thin films

Journal of Applied Physics

Volumn 112, Issue 3, 2012, Pages

  Makise, Kazumasa ^a   Shinozaki, Bunju ^b   Asano, Takayuki ^b   Mitsuishi, Kazutaka ^c   Yano, Koki ^d   Inoue, Kazuyoshi ^d   Nakamura, Hiroaki ^d  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c National Institute of Material and Science   (Japan)

^d IDEMITSU KOSAN CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT CHARACTERISTICS; IONIZED IMPURITY SCATTERING; METALLIC BEHAVIORS; MODEL-BASED OPC; MOTT VARIABLE-RANGE HOPPING; TRANSPORT MECHANISM; VARIABLE RANGE HOPPING; ZNO THIN FILM;

CARRIER CONCENTRATION;

AMORPHOUS FILMS;

EID: 84865222243     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745055     Document Type: Article

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