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Volumn 358, Issue 17, 2012, Pages 2437-2442

Properties and doping limits of amorphous oxide semiconductors

Author keywords

Amorphous oxide semiconductor; Doping; Mobility edge; Tail states; Thin film transistor

Indexed keywords

A-SI:H; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); BOHR RADIUS; DENSITY OF STATE; DOPING PROPERTIES; LOCALISATION; SEMICONDUCTING OXIDE; TAIL STATES; TOTAL DENSITY; TRANSPARENT ELECTRONICS; TURN-ON CHARACTERISTICS;

EID: 84865729276     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2011.12.012     Document Type: Conference Paper
Times cited : (36)

References (68)
  • 52
    • 84865730094 scopus 로고    scopus 로고
    • H Y Lee, S J Clark, J Robertson, unpublished work
    • H Y Lee, S J Clark, J Robertson, unpublished work.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.