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Volumn 40, Issue 2, 2009, Pages 210-214
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The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures
a
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Author keywords
Cathodoluminescence; Stacking faults; TEM; ZnO
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Indexed keywords
CARRIER CONCENTRATION;
CATHODOLUMINESCENCE;
EXCITONS;
LEAD;
LIGHT;
LIGHT EMISSION;
LUMINESCENCE;
NANOSTRUCTURES;
PHOSPHORUS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
TRANSMISSION ELECTRON MICROSCOPY;
ZINC OXIDE;
ACCEPTOR STATES;
BOUND EXCITON (BEX);
EMISSION BANDS;
H IGH CONCENTRATIONS;
LITERATURE DATA;
PAIR TRANSITIONS;
ROOM-TEMPERATURE (RT);
SPATIAL RESOLUTION (SR);
TEM;
TRANSMISSION ELECTRON MICROSCOPE (TEM);
VALENCE BAND EDGES;
ZNO;
ZNO LAYERS;
ZNO NANOSTRUCTURES;
STACKING FAULTS;
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EID: 58749108469
PISSN: 00262692
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mejo.2008.07.031 Document Type: Article |
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Times cited : (38)
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References (30)
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