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Volumn 49, Issue 3 PART 2, 2010, Pages

Meyer-neldel rule and extraction of density of states in amorphous indium-gallium-zinc-oxide thin-film transistor by considering surface band bending

(5) Jeong, Jaewook a,b Jeong, Jae Kyeong c Park, Jin Seong d Mo, Yeon Gon e Hong, Yongtaek a,b

a Seoul National University (South Korea)

b Seoul National University (South Korea)

c Inha University (South Korea)

d Dankook University (South Korea)

e Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP REGION; CONTACT CHARACTERISTICS; DENSITY OF STATE; ELECTROSTATIC POTENTIALS; FIELD-EFFECT; GATE-TO-SOURCE VOLTAGES; JAPAN SOCIETY OF APPLIED PHYSICS; LOW DENSITY; MEYER-NELDEL RULES; SURFACE BAND BENDING; TEMPERATURE DEPENDENT;

AMORPHOUS FILMS; ENERGY GAP; FERMI LEVEL; FERMIONS; GALLIUM; INDIUM; PRASEODYMIUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC;

THIN FILM TRANSISTORS;

EID: 77952575350 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.03CB02 Document Type: Article

Times cited : (51)

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