Top-gate staggered a-IGZO TFTs adopting the bilayer gate insulator for driving AMOLED

IEEE Transactions on Electron Devices

Volumn 59, Issue 6, 2012, Pages 1701-1708

  Lin, Chang Yu ^a,b   Chien, Chih Wei ^a   Wu, Cheng Han ^a   Hsieh, Hsing Hung ^a   Wu, Chung Chih ^a   Yeh, Yung Hui ^b   Cheng, Chun Cheng ^b   Lai, Chih Ming ^b   Yu, Ming Jiue ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Active matrix organic light emitting display (AMOLED); bilayer gate insulator; In Ga Zn O (IGZO); thin film transistors (TFTs)

Indexed keywords

ACTIVE MATRIXES; AM-OLED; BACK CHANNELS; BI-LAYER; CHANNEL LAYERS; DEVICE PERFORMANCE; ENVIRONMENTAL STABILITY; ETCHING PROCESS; GATE INSULATOR; IN-GA-ZN-O; INTERFACE PROPERTY; ORGANIC LIGHT-EMITTING; THIN-FILM TRANSISTOR (TFTS);

DISPLAY DEVICES; ETCHING; GALLIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SILICON NITRIDE; ZINC;

THIN FILM TRANSISTORS;

EID: 84861341691     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2191409     Document Type: Article

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