Letter: A low-cost low-temperature thin-film-transistor backplane based on oxide semiconductor

Journal of the Society for Information Display

Volumn 20, Issue 4, 2012, Pages 175-177

  Lan, Linfeng ^a   Xiong, Nana ^a   Xiao, Peng ^a   Shi, Wen ^a   Xu, Miao ^a   Xu, Wei ^a   Yao, Rihui ^a   Peng, Junbiao ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Anodic; Transistor; Zinc oxide

Indexed keywords

AM-OLED; ANODIC; BACKPLANES; FIELD-EFFECT MOBILITIES; INDIUM GALLIUM ZINC OXIDES (IGZO); LOW TEMPERATURES; OXIDE SEMICONDUCTOR; THIN FILM TRANSISTORS (TFT); ZINC OXIDE (ZNO);

ANODIC OXIDATION; DISPLAY DEVICES; GALLIUM; GATE DIELECTRICS; INDIUM; LIGHT EMITTING DIODES; PHOTORESISTS; SEMICONDUCTING INDIUM; TRANSISTORS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84859410780     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID20.4.175     Document Type: Article

References (17)

1. C. Tang and S. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).
2. J. Burroughes et al., Nature 347, 539 (1990).
3. H. Hosono et al., J. Non-Cryst. Solids 203, 334 (1996).
4. S. M. Jahinuzzaman et al., Appl. Phys. Lett. 87, 023502 (2005).
5. T. Kamiya et al., J. Vac. Sci. Technol. B 21, 1000 (2003).
6. S. Higashi et al., Jpn. J. Appl. Phys. 41, 3646 (2002).
7. R. Hoffman et al., Appl. Phys. Lett. 82, 733 (2003).
8. K. Nomura et al., Science 300, 1269 (2003).
9. K. Nomura et al., Nature (London) 432, 488 (2004).
10. H. Xu et al., Appl. Phys. Lett. 99, 253501 (2011).
11. H. Lee et al., J. Soc. Info. Display 16, 265 (2008).
12. J. Jeong et al., J. Soc. Info. Display 17, 95 (2009).
13. J. K. Jeong et al., SID Symposium Digest 39, 1 (2008).
14. L. Lan and and J. Peng, IEEE Trans. Electron Devices 58, 1452 (2011).
15. M. Li et al., J. Phys. D: Appl. Phys. 44, 455102 (2011).
16. L. Lan et al., J. Appl. Phys. 110, 103703 (2011).
17. J. K. Jeong et al., Appl. Phys. Lett. 93, 123508 (2008).