Corrigendum to “Mechanical layer compaction for dispersion processed nanoparticulate zinc oxide thin film transistors” [Microelectron. Eng. 96 (2012) 36–39](S0167931712001013)(10.1016/j.mee.2012.02.044);Mechanical layer compaction for dispersion processed nanoparticulate zinc oxide thin film transistors

Microelectronic Engineering

Volumn 96, Issue , 2012, Pages 36-39

  Bubel, S ^a   Schmechel, R ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Dispersion; Polyvinylpyrrolidone; Thin film transistor; Zinc oxide

Indexed keywords

COMPACTION; DISPERSION (WAVES); DISPERSIONS; FIELD EFFECT TRANSISTORS; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; OXIDE FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

COMPACTION PROCESS; LOW TEMPERATURES; NANO PARTICULATES; POLY VINYL PYRROLIDONE; SATURATION MOBILITY; SOLUTION PROCESSABLE; ZINC OXIDE (ZNO); ZINC OXIDE THIN FILMS;

THIN FILM CIRCUITS;

EID: 84859492269     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.10.002     Document Type: Erratum

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