Modelling of trap-assisted electronic conduction in thin thermally nitrided oxide films

Solid-State Electronics

Volumn 39, Issue 3, 1996, Pages 385-390

  Yang, B L ^a   Wong, H ^a   Cheng, Y C ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; IONIC CONDUCTION; MATHEMATICAL MODELS; NITRIDING; OXIDES; SILICON WAFERS; THERMAL EFFECTS;

SHALLOW TRAPS; THIN THERMALLY NITRIDED OXIDE FILMS; TRAP ASSISTED ELECTRONIC CONDUCTION;

THIN FILMS;

EID: 0030101890     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00134-4     Document Type: Article

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