Subgap density-of-states-based amorphous oxide thin film transistor simulator (DeAOTS)

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 2988-3000

  Jeon, Yong Woo ^a   Kim, Sungchul ^a   Lee, Sangwon ^a   Kim, Dong Myong ^a   Kim, Dae Hwan ^a   Park, Jaechul ^b   Kim, Chang Jung ^b   Song, Ihun ^b   Park, Youngsoo ^b   Chung, U In ^b   Lee, Je Hun ^c   Ahn, Byung Du ^c   Park, Sei Yong ^c   Park, Jun Hyun ^c   Kim, Joo Han ^c  

^a Kookmin University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Amorphous indiumgalliumzincoxide (a IGZO); dc IV model; density of states (DOS); oxide thin film transistor (TFT) oriented simulator; thin film transistors (TFTs)

Indexed keywords

A-SI TFT; AMORPHOUS INDIUMGALLIUMZINCOXIDE (A-IGZO); AMORPHOUS OXIDES; DC IV MODEL; DENSITY OF STATE; DENSITY OF STATES (DOS); DENSITY-OF-STATES; DOPING CONCENTRATION; EFFECTIVE MOBILITIES; ELECTRICAL CHARACTERISTIC; INDUCED CHARGES; IV CHARACTERISTICS; MULTI FREQUENCY; NUMERICAL ITERATION; PHYSICAL MEANINGS; PHYSICAL PARAMETERS; SATURATION REGIME; SIMULATION RESULT; SINGLE EQUATION; SUBTHRESHOLD;

AMORPHOUS FILMS; PARAMETER EXTRACTION; SEMICONDUCTING ORGANIC COMPOUNDS; SIMULATORS;

THIN FILM TRANSISTORS;

EID: 77958594681     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2072926     Document Type: Article

References (38)

1. H. N. Cho, H. Y. Kim, C. I. Ryoo, S. C. Choi, B. Kim, Y. H. Jang, S. Y. Yoon, M. D. Chun, K.-S. Park, T. Moon, N. W. Cho, S. H. Jo, S. K. Kim, C.-D. Kim, and I. B. Kang, "Amorphous-silicon gate-driver circuits of shared-node dual pull-down structure with overlapped output signals," J. Soc. Inf. Display, vol. 16, no. 1, pp. 77-81, Jan. 2008.
2. K. Sakariya, S. Sambandan, P. Servati, and A. Nathan, "Analysis and characterization of self-compensating current programmed a-Si:H active matrix organic light-emitting diode pixel circuits," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 22, no. 3, pp. 1001-1004, May 2004.
3. G. R. Chaji, C. Ng, A. Nathan, A. Werner, J. Birnstock, O. Schneider, and J. Blochwitz-Nimoth, "Electrical compensation of OLED luminance degradation," IEEE Electron Device Lett., vol. 28, no. 12, pp. 1108-1110, Dec. 2007.
4. H.-C. Chen, K.-Y. Chiang, M.-D. Chen, C.-P. Kung, and W.-H. Hou, "a-Si robust gate driver of 7.0-in. WVGA LCD panel," in Proc. SID Dig. Tech. Papers, May 2007, pp. 222-225.
5. S.-H. Moon, Y.-S. Lee, M.-C. Lee, B. H. Berkeley, N.-D. Kim, and S.-S. Kim, "Integrated a-Si:H TFT gate driver circuits on large area TFTLCDs," in Proc. SID Dig. Tech. Papers, May 2007, pp. 1478-1481.
6. J. F. Wager, "Transparent electronics," Science, vol. 300, no. 5623, pp. 1245-1246, May 2003.
7. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, and T. Kawai, "Transparent thin film transistors using ZnO as an active channel layer and their electrical properties," J. Appl. Phys., vol. 93, no. 3, pp. 1624-1630, Feb. 2003.
8. R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors," Appl. Phys. Lett., vol. 82, no. 5, pp. 733-735, Feb. 2003.
9. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, "Thin-film transistor fabricated in single-crystal transparent oxide semiconductor," Science, vol. 300, no. 5623, pp. 1269-1272, May 2003.
10. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
11. J. Y. Kwon, K. S. Son, J. S. Jung, T. S. Kim, M. K. Ryu, K. B. Park, B. W. Yoo, J. W. Kim, Y. G. Lee, K. C. Park, S. Y. Lee, and J. M. Kim, "Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display," IEEE Electron Device Lett., vol. 29, no. 12, pp. 1309-1311, Dec. 2008.
12. Y. Ohta, Y. Chikama, T. Hara, Y. Mizuno, T. Aita, M. Takei, M. Suzuki, O. Nakagawa, Y. Harumoto, H. Nishiki, and N. Kimura, "Amorphous In-Ga-Zn-O TFT-LCDs with high reliability," in Proc. Int. Display Workshop, Dec. 2009, pp. 1685-1688.
13. J. Sakata, H. Ohara, M. Sasaki, T. Osada, H. Miyake, H. Shishido, J. Koyama, Y. Oikawa, H. Maruyama, M. Sakakura, T. Serikawa, and S. Yamazaki, "Development of 4.0-in. AMOLED display with driver circuit using amorphous In-Ga-Zn-Oxide TFTs," in Proc. Int. Display Workshop, Dec. 2009, pp. 689-692.
14. J.-H. Lee, D.-H. Kim, D.-J. Yang, S.-Y. Hong, K.-S. Yoon, P.-S. Hong, C.-O. Jeong, H.-S. Park, S. Y. Kim, S. K. Lim, and S. S. Kim, "World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT," in Proc. SID Dig. Tech. Papers, May 2008, pp. 625-628.
15. H.-H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C.-C. Wu, "Modeling of amorphous oxide semiconductor thin film transistors and subgap density of states," in Proc. SID Dig. Tech. Papers, May 2008, pp. 1277-1280.
16. T.-C. Fung, C.-S. Chuang, C. Chen, K. Abe, R. Cottle, M. Townsend, H. Kumomi, and J. Kanicki, "Two-dimensional numerical simulation of radio frequency sputter amorphous In-Ga-Zn-O thin-film transistors," J. Appl. Phys., vol. 106, no. 8, p. 084511, Oct. 2009.
17. H. Godo, D. Kawae, S. Yoshitomi, T. Sasaki, S. Ito, H. Ohara, A. Miyanaga, and S. Yamazaki, "Numerical analysis on temperature dependence of characteristics of amorphous In-Ga-Zn-Oxide TFT," in Proc. SID Dig. Tech. Papers, May 2009, pp. 1110-1112.
18. M. Shur and M. Hack, "Physics of amorphous silicon based alloy field-effect transistors," J. Appl. Phys., vol. 55, no. 10, pp. 3831-3842, May 1984. (Pubitemid 14607731)
19. M. Shur, M. Hack, and J. G. Shaw, "A new analytic model for amorphous silicon thin-film transistors," J. Appl. Phys., vol. 66, no. 7, pp. 3371-3380, Oct. 1989.
20. S.-S. Chen and J. B. Kuo, "An analytical a-Si:H TFT dc/capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states," IEEE Trans. Electron Devices, vol. 41, no. 7, pp. 1169-1178, Jul. 1994.
21. M. S. Shur, H. C. Slade, M. D. Jacunski, A. A. Owusu, and T. Ytterdal, "SPICE models for amorphous silicon and polysilicon thin film transistors," J. Electrochem. Soc., vol. 144, no. 8, pp. 2833-2839, Aug. 1997.
22. K. Khakzar and E. H. Lueder, "Modeling of amorphous-silicon thin-film transistors for circuit simulations with SPICE," IEEE Trans. Electron Devices, vol. 39, no. 6, pp. 1428-1434, Jun. 1992.
23. K. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, J.-H. Park, S. Lee, D. M. Kim, and D. H. Kim, "Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics," Appl. Phys. Lett., vol. 93, no. 18, p. 182102, Nov. 2008.
24. J.-H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, C. J. Kim, J. Park, Y. Park, D. M. Kim, and D. H. Kim, "Extraction of density of states in amorphous GaInZnO thin film transistors by combining an optical charge pumping and capacitance-voltage characteristics," IEEE Electron Device Lett., vol. 29, no. 12, pp. 1292-1295, Dec. 2008.
25. J.-H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, C. Jung Kim, J. Park, Y. Park, D. M. Kim, and D. H. Kim, "Density of states-based dc I-V model of amorphous gallium-indium-zinc-oxide thin-film transistors," IEEE Electron Device Lett., vol. 30, no. 10, pp. 1069-1071, Oct. 2009.
26. S. Lee, S. Park, S. Kim, Y. W. Jeon, K. Jeon, J.-H. Park, J. Park, I. Song, C. J. Kim, Y. Park, D. M. Kim, and D. H. Kim, "Extraction of subgap density of states in amorphous InGaZnO thin film transistors by using multi-frequency capacitance-voltage characteristics," IEEE Electron Device Lett., vol. 31, no. 3, pp. 231-233, Mar. 2010.
27. M. D. Jacunski, M. S. Shur, and M. Hack, "Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs," IEEE Trans. Electron Devices, vol. 43, no. 9, pp. 1433-1440, Sep. 1996.
28. P. Servati, D. Striakhilev, and A. Nathan, "Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 50, no. 11, pp. 2227-2235, Nov. 2003.
29. P. Barquinha, A. M. Vilà, G. Gonçalves, L. Pereira, R. Martins, J. R. Morante, and E. Fortunato, "Gallium indium zinc-oxide-based thin-film transistors: Influence of the source/drain material," IEEE Trans. Electron Devices, vol. 55, no. 4, pp. 954-960, Apr. 2008.
30. 4," Thin Solid Films, vol. 486, no. 1/2, pp. 38-41, Aug. 2005. (Pubitemid 40952537)
31. K. Nomura, T. Kamiya, H. Yanagi, E. Lkenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, "Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive X-ray photoelectron spectroscopy," Appl. Phys. Lett., vol. 92, no. 20, p. 202117, May 2008.
32. T. Kamiya, K. Nomura, and H. Hosono, "Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping," J. Display Technol., vol. 5, no. 7, pp. 273-288, Jul. 2009.
33. 4 thin-film transistors," Appl. Phys. Lett., vol. 92, no. 13, pp. 133512-1-133512-3, Apr. 2008.
34. C. Chen, K. Abe, H. Kumomi, and J. Kanicki, "Density of states of a-InGaZnO from temperature-dependent field-effect studies," IEEE Trans. Electron Devices, vol. 56, no. 6, pp. 1177-1183, Jun. 2009.
35. J. Jeong, J. K. Jeong, J.-S. Park, Y.-G. Mo, and Y. Hong, "Meyer-Neldel rule and extraction of density of states in amorphous indium-gallium-zinc-oxide thin-film transistor by considering surface band bending," Jpn. J. Appl. Phys., vol. 49, no. 3, p. 03CB02-1, Mar. 2010.
36. C.-S. Hwang, S.-H. Ko Park, W.-S. Cheong, J. Shin, S. Yang, C. Byun, M. K. Ryu, D.-H. Cho, S. M. Yoon, S. M. Chung, H. Y. Chu, and K. I. Cho, "Effects of active thickness in oxide semiconductor TFTs," in Proc. SID Dig. Tech. Papers, May 2009, pp. 1107-1109.
37. J. S. Park, J. K. Jeong, Y.-G. Mo, H. D. Kim, and C.-J. Kim, "Control of threshold voltage in ZnO-based oxide thin film transistors," Appl. Phys. Lett., vol. 93, no. 3, p. 033513, Jul. 2008.
38. 4TFT fabricated on plastic substrates," Electrochem. Solid-State Lett., vol. 11, no. 12, pp. H317-H319, Sep. 2008.