Density of states-based DC I-V model of amorphous gallium-indium-zinc-oxide thin-film transistors

IEEE Electron Device Letters

Volumn 30, Issue 10, 2009, Pages 1069-1071

  Park, Jun Hyun ^a   Lee, Sangwon ^a   Jeon, Kichan ^a   Kim, Sunil ^a   Kim, Sangwook ^a   Park, Jaechul ^a   Song, Ihun ^a   Kim, Chang Jung ^a   Park, Youngsoo ^a   Kim, Dong Myong ^a   Kim, Dae Hwan ^a  

^a Kookmin University   (South Korea)

Author keywords

Amorphous; Dc model; Density of states (DOS); GaInZnO; Thin film transistors (TFTs)

Indexed keywords

DC MODEL; DENSITY OF STATE; EXPONENTIAL TAIL; EXTRACTING PARAMETER; GAINZNO; GATE VOLTAGES; GAUSSIANS; INDIUM ZINC OXIDES; NONLINEAR RELATIONS; PUMPING TECHNIQUES; V-MODEL;

AMORPHOUS FILMS; GALLIUM; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; TRANSISTORS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 72049117902     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2028042     Document Type: Article

References (8)

1. 8-ZnO TFT for activematrix organic light-emitting diode display application," in IEDM Tech. Dig., 2006, pp. 11.6.1-11.6.4.
2. J. K. Jeong, J. H. Jeong, J. H. Choi, J. S. Im, S. H. Kim, H. W. Yang, K. N. Kang, K. S. Kim, T K. Ahn, H.-J. Chung, and H. K. Chung, "12.1-inch WXGA AMOLED display driven by indium-gallium-zinc oxide TFTs array," in Proc. Soc. Inform. Display Int. Symp. Dig. Tech. Papers, 2008, pp. 1-4.
3. J.-H. Lee, D.-H. Kim, D.-J. Yang, S.-Y. Hong, K.-S. Yoon, P.-S. Hong, C.-O. Jeong, H.-S. Park, S. Y. Kim, S. K. Lim, S. S. Kim, K.-S. Son, T-S. Kim, J.-Y. Kwon, and S.-Y. Lee, "World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT," in Proc. Soc. Inform. Display Int. Symp. Dig. Tech. Papers, 2008, pp. 625-628.
4. M.-J. Lee, C B. Lee, S. Kim, H. Yin, J. Park, S. E. Ahn, B. S. Kang, K. H. Kim, G. Stefanovich, I. Song, S.-W. Kim, J. H. Lee, S. J. Chung, Y H. Kim, C. S. Lee, J. B. Park, I. G. Baek, C. J. Kim, and Y Park, "Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates," in IEDM Tech. Dig., 2008, pp. 85-88.
5. J.-H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, C J. Kim, J. Park, Y. Park, D. M. Kim, and D. H. Kim, "Extraction of density of states in amorphous GaInZnO thin film, transistors by combining an optical charge pumping and capacitance-voltage characteristics," IEEE Electron Device Lett., vol.29, no.12, pp. 1292-1295, Dec. 2008.
6. S.-S. Chen and J. B. Kuo, "An analytical α-Si:H TFT DC/capacitance model using an effective temperature approach, for deriving a switching time model for an inverter circuit considering deep and tail states," IEEE Trans. Electron Devices, vol.41, no.7, pp. 1169-1178, Jul. 1994.
7. J. Zaumseil, K. W. Baldwin, and J. A. Rogers, "Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination," J. Appl. Phys., vol.93, no.10, pp. 6117-6124, May 2003.
8. P. Barquinha, A. M. Vila, G. Gonçalves, L. Pereira, R. Martins, J. R. Morante, and E. Fortunato, "Gallium-indium-zinc-oxide-based thinfilm transistors: Influence of the source/drain material," IEEE Trans. Electron Devices, vol.55, no.4, pp. 954-960, Apr. 2008.