SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

Extrinsic interface formation of Hf O2 and Al2 O 3 /Ge Ox gate stacks on Ge (100) substrates

(7) Seo, H a Bellenger, F b Chung, K B c Houssa, M d Meuris, M b Heyns, M b Lucovsky, G c

a UNIVERSITY OF CALIFORNIA (United States)

b IMEC (Belgium)

c NORTH CAROLINA STATE UNIVERSITY (United States)

d UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BAND POTENTIAL; CAPACITANCE VOLTAGE CHARACTERISTIC; GATE STACKS; GE(100); INTERFACE FORMATION; INTERFACE LAYER; INTERFACIAL LAYER; LOW BANDGAP; MEDIUM ENERGY ION SCATTERING; NONSTOICHIOMETRIC; TRAPPED CHARGE;

ALUMINUM; CHARGE TRAPPING; ELECTRIC POTENTIAL; HAFNIUM; HAFNIUM COMPOUNDS; LOGIC GATES; PHASE INTERFACES; SPECTROSCOPIC ELLIPSOMETRY;

GERMANIUM;

EID: 69749114107 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3204026 Document Type: Article

Times cited : (22)

References (20)

1
- 33645527776
- 10.1063/1.2189456
- A. Ritenour, A. Khakifirooz, D. A. Antoniadis, R. Z. Leia, W. Tsai, A. Dimoulas, G. Mavrou, and Y. Panayiotatos, Appl. Phys. Lett. 88, 132107 (2006). 10.1063/1.2189456
- (2006) Appl. Phys. Lett. , vol.88 , pp. 132107
- Ritenour, A.¹ Khakifirooz, A.² Antoniadis, D.A.³ Leia, R.Z.⁴ Tsai, W.⁵ Dimoulas, A.⁶ Mavrou, G.⁷ Panayiotatos, Y.⁸

2
- 24144440417
- 2
- DOI 10.1063/1.1947372, 032107
- V. V. Afanas'ev, Y. G. Fedorenko, and A. Stesmans, Appl. Phys. Lett. 85, 032107 (2005). 10.1063/1.1947372 (Pubitemid 41227612)
- (2005) Applied Physics Letters , vol.87 , Issue.3 , pp. 1-3
- Afanas'ev, V.V.¹ Fedorenko, Y.G.² Stesmans, A.³

3
- 33745686693
- Nanoscale germanium MOS dielectrics - Part II: High-κ gate dielectrics
- DOI 10.1109/TED.2006.875812
- C. O. Chui, H. S. Kim, D. Chi, P. C. McIntyre, and K. C. Saraswat, IEEE Trans. Electron Devices 53, 1509 (2006). 10.1109/TED.2006.875812 (Pubitemid 43997210)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.7 , pp. 1509-1516
- Chui, C.O.¹ Kim, H.² Chi, D.³ Mcintyre, P.C.⁴ Saraswat, K.C.⁵

4
- 33751256012
- 2 as gate dielectric on Ge: Interfaces and deposition techniques
- DOI 10.1016/j.mseb.2006.08.016, PII S0921510706004673
- M. Caymax, S. Van Elshocht, M. Houssa, A. Delabie, T. Conard, M. Meuris, M. M. Heyns, A. Dimoulas, S. Spiga, M. Fanciulli, J. W. Seo, and L. V. Goncharova, Mater. Sci. Eng., B 135, 256 (2006). 10.1016/j.mseb.2006.08.016 (Pubitemid 44780822)
- (2006) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.135 , Issue.3 , pp. 256-260
- Caymax, M.¹ Van Elshocht, S.² Houssa, M.³ Delabie, A.⁴ Conard, T.⁵ Meuris, M.⁶ Heyns, M.M.⁷ Dimoulas, A.⁸ Spiga, S.⁹ Fanciulli, M.¹⁰ Seo, J.W.¹¹ Goncharova, L.V.¹²

5
- 20844445051
- 2 -Ge metal-insulator- semiconductor capacitors
- DOI 10.1063/1.1944227, 223507
- A. Dimoulas, G. Vellianitis, G. Mavrou, E. K. Evangelou, and A. Sotiropoulos, Appl. Phys. Lett. 86, 223507 (2005). 10.1063/1.1944227 (Pubitemid 40861635)
- (2005) Applied Physics Letters , vol.86 , Issue.22 , pp. 1-3
- Dimoulas, A.¹ Vellianitis, G.² Mavrou, G.³ Evangelou, E.K.⁴ Sotiropoulos, A.⁵

6
- 34248675790
- 2/Ge FET's with Si passivation
- DOI 10.1016/j.mee.2007.04.100, PII S0167931707004510, INFOS 2007
- B. Kaczer, B. De Jaeger, G. Nicholas, K. Martens, R. Degraeve, M. Houssa, G. Pourtois, F. Leys, M. Meuris, and G. Groeseneken, Microelectron. Eng. 84, 2067 (2007). 10.1016/j.mee.2007.04.100 (Pubitemid 46777009)
- (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 2067-2070
- Kaczer, B.¹ De Jaeger, B.² Nicholas, G.³ Martens, K.⁴ Degraeve, R.⁵ Houssa, M.⁶ Pourtois, G.⁷ Leys, F.⁸ Meuris, M.⁹ Groeseneken, G.¹⁰

7
- 34548230096
- Effective electrical passivation of Ge(100) for high- k gate dielectric layers using germanium oxide
- DOI 10.1063/1.2773759
- A. Delabie, F. Bellenger, M. Houssa, Th. Conard, S. Van Elshocht, M. Caymax, M. Heyns, and M. Meuris, Appl. Phys. Lett. 91, 082904 (2007). 10.1063/1.2773759 (Pubitemid 47318977)
- (2007) Applied Physics Letters , vol.91 , Issue.8 , pp. 082904
- Delabie, A.¹ Bellenger, F.² Houssa, M.³ Conard, T.⁴ Van Elshocht, S.⁵ Caymax, M.⁶ Heyns, M.⁷ Meuris, M.⁸

8
- 69749111260
- (to be published).
- K. B. Chung, J. P. Long, H. Seo, and G. Lucovsky, J. Appl. Phys. (to be published).
- J. Appl. Phys.
- Chung, K.B.¹ Long, J.P.² Seo, H.³ Lucovsky, G.⁴

9
- 33646891317
- Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
- DOI 10.1016/j.mser.2006.04.001, PII S0927796X06000258
- M. Houssa, L. Pantisano, L.-A. Ragnarsson, R. Degraeve, T. Schram, G. Pourtois, S. De Gendt, G. Groeseneken, and M. M. Heyns, Mater. Sci. Eng. R. 51, 37 (2006). 10.1016/j.mser.2006.04.001 (Pubitemid 43783301)
- (2006) Materials Science and Engineering R: Reports , vol.51 , Issue.4-6 , pp. 37-85
- Houssa, M.¹ Pantisano, L.² Ragnarsson, L.-A.³ Degraeve, R.⁴ Schram, T.⁵ Pourtois, G.⁶ De Gendt, S.⁷ Groeseneken, G.⁸ Heyns, M.M.⁹

10
- 34547913502
- Intrinsic electronically active defects in transition metal elemental oxides
- DOI 10.1143/JJAP.46.1899, Solid State Devices and Materials
- G. Lucovsky, H. Seo, S. Ulrich, J. Luning, P. Lysaght, and G. Bersuker, Jpn. J. Appl. Phys., Part 1 46, 1899 (2007). 10.1143/JJAP.46.1899 (Pubitemid 47256692)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , pp. 1899-1909
- Lucovsky, G.¹ Seo, H.² Lee, S.³ Fleming, L.B.⁴ Ulrich, M.D.⁵ Luning, J.⁶ Lysaght, P.⁷ Bersuker, G.⁸

11
- 0019648336
- D. E. Aspnes, Proc. SPIE 276, 188 (1981).
- (1981) Proc. SPIE , vol.276 , pp. 188
- Aspnes, D.E.¹

12
- 0018496263
- 4 MIXTURES.
- DOI 10.1063/1.325596
- D. E. Aspnes and J. B. Theeten, J. Appl. Phys. 50, 4928 (1979). 10.1063/1.325596 (Pubitemid 10468039)
- (1979) Journal of Applied Physics , vol.50 , Issue.7 , pp. 4928-4935
- Aspnes, D.E.¹ Theeten, J.B.²

13
- 23744494707
- 2/Ge(001) interface
- DOI 10.1063/1.2006211, 042902
- K. I. Seo, P. C. McIntyre, S. Sun, D. I. Lee, P. Pianetta, and K. C. Saraswat, Appl. Phys. Lett. 87, 042902 (2005). 10.1063/1.2006211 (Pubitemid 41117975)
- (2005) Applied Physics Letters , vol.87 , Issue.4 , pp. 1-3
- Seo, K.-I.¹ McIntyre, P.C.² Sun, S.³ Lee, D.-I.⁴ Pianetta, P.⁵ Saraswat, K.C.⁶

14
- 38349085909
- 10.1063/1.2831668
- V. V. Afanas'ev, A. Stesmans, A. Delabie, F. Bellenger, M. Houssa, and M. Meuris, Appl. Phys. Lett. 92, 022109 (2008). 10.1063/1.2831668
- (2008) Appl. Phys. Lett. , vol.92 , pp. 022109
- Afanas'Ev, V.V.¹ Stesmans, A.² Delabie, A.³ Bellenger, F.⁴ Houssa, M.⁵ Meuris, M.⁶

15
- 14644412902
- Bond strain and defects at interfaces in high-k gate stacks
- DOI 10.1016/j.microrel.2004.11.051, PII S0026271404004470, 13th Workshop on Dielectrics in Microelectronics
- G. Lucovsky and J. C. Phillips, Microelectron. Reliab. 45, 770 (2005). 10.1016/j.microrel.2004.11.051 (Pubitemid 40309033)
- (2005) Microelectronics Reliability , vol.45 , Issue.5-6 , pp. 770-778
- Lucovsky, G.¹ Phillips, J.C.²

16
- 33745614305
- Mesostructured germanium with cubic pore symmetry
- DOI 10.1038/nature04833, PII N04833
- G. S. Armatas and M. G. Kanatzidis, Nature (London) 441, 04833 (2006). 10.1038/nature04833 (Pubitemid 43990729)
- (2006) Nature , vol.441 , Issue.7097 , pp. 1122-1125
- Armatas, G.S.¹ Kanatzidis, M.G.²

17
- 0024699932
- 10.1007/BF01730138
- J. Beynon, M. M. A. G. El-Samanoudy, and S. K. J. Al-Ani, J. Mater. Sci. Lett. 8, 786 (1989). 10.1007/BF01730138
- (1989) J. Mater. Sci. Lett. , vol.8 , pp. 786
- Beynon, J.¹ El-Samanoudy, M.M.A.G.² Al-Ani, S.K.J.³

18
- 0000386287
- 10.1063/1.345279
- Y. Kido and T. Koshikwa, J. Appl. Phys. 67, 187 (1990). 10.1063/1.345279
- (1990) J. Appl. Phys. , vol.67 , pp. 187
- Kido, Y.¹ Koshikwa, T.²

19
- 34248660839
- Experimental and theoretical study of Ge surface passivation
- DOI 10.1016/j.mee.2007.04.114, PII S016793170700487X, INFOS 2007
- M. Houssa, G. Pourtois, B. Kaczer, B. De Jaeger, F. Leys, D. Nelis, K. Paredis, A. Vantomme, M. Caymax, M. Meuris, and M. Heyns, Microelectron. Eng. 84, 2267 (2007). 10.1016/j.mee.2007.04.114 (Pubitemid 46777017)
- (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 2267-2273
- Houssa, M.¹ Pourtois, G.² Kaczer, B.³ De Jaeger, B.⁴ Leys, F.E.⁵ Nelis, D.⁶ Paredis, K.⁷ Vantomme, A.⁸ Caymax, M.⁹ Meuris, M.¹⁰ Heyns, M.M.¹¹

20
- 34247117334
- I. Crupi, R. Degraeve, B. Govoreanu, D. P. Brunco, P. Roussel, and J. Van Houdt, Microelectron. Reliab. 47, 770 (2007).
- (2007) Microelectron. Reliab. , vol.47 , pp. 770
- Crupi, I.¹ Degraeve, R.² Govoreanu, B.³ Brunco, D.P.⁴ Roussel, P.⁵ Van Houdt, J.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.