Antimonide NMOSFET with source side injection velocity of 2.7×10 7 cm/s for low power high performance logic applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 181-182

  Ali, A ^a   Madan, H ^a   Barth, M J ^a   Hollander, M J ^a   Boos, J B ^b   Bennett, B R ^b   Datta, S ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONIDES; DRAIN BIAS; EFFECTIVE ELECTRON MOBILITY; HIGH FIELD; HIGH-PERFORMANCE LOGIC APPLICATIONS; III-V MOSFET; LOW POWER; MOSFETS; NMOSFET; SHORT CHANNELS; SOURCE-SIDE INJECTION;

ELECTRON MOBILITY; HAFNIUM OXIDES;

MOSFET DEVICES;

EID: 84866545789     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242521     Document Type: Conference Paper

References (4)

1. M. Hudait, S. Datta, R. Chau et al.; US Patent No. 7429747
2. A. Ali et al.; EDL 2011
3. S.Kim et al.; IEDM 2011
4. M. Radosavljevic et al.; IEDM 2009