Valence band offset of inn/batio3 heterojunction measured by x-ray photoelectron spectroscopy

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Jia, Caihong ^a,b   Chen, Yonghai ^a   Guo, Yan ^a   Liu, Xianglin ^a   Yang, Shaoyan ^a   Zhang, Weifeng ^b   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HENAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; III-V SEMICONDUCTORS; PHOTOELECTRONS; PHOTONS; WIDE BAND GAP SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY; VALENCE BANDS;

CONDUCTION BAND OFFSET; MULTIFUNCTIONAL DEVICES; TYPE I BAND ALIGNMENTS; VALENCE BAND OFFSETS; BAND ALIGNMENTS;

VALENCE BANDS; HETEROJUNCTIONS;

EID: 84255167546     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-316     Document Type: Article

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