Study of intermetallic growth and kinetics in fine-pitch lead-free solder bumps for next-generation flip-chip assemblies

Journal of Electronic Materials

Volumn 42, Issue 2, 2013, Pages 230-239

  Tian, Ye ^a,b   Chow, Justin ^b   Liu, Xi ^b   Wu, Yi Ping ^a   Sitaraman, Suresh K ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

cross reaction; intermetallic compounds; Lead free solders; microstructure evolution

Indexed keywords

ACTIVATION ENERGY; BINARY ALLOYS; CHIP SCALE PACKAGES; COPPER; DIES; GROWTH KINETICS; INTERMETALLICS; KINETICS; LEAD-FREE SOLDERS; METALLURGY; MICROELECTRONICS; PHOSPHORUS COMPOUNDS; SOLDERED JOINTS; SOLDERING; THERMAL AGING; THICKNESS MEASUREMENT;

APPARENT ACTIVATION ENERGY; CROSS REACTION; FLIP CHIP SOLDER BUMP; INDUSTRIAL PRACTICES; INTERMETALLIC GROWTH; LEAD-FREE SOLDER BUMP; MICRO-STRUCTURE EVOLUTIONS; MICROELECTRONIC ASSEMBLY;

FLIP CHIP DEVICES;

EID: 84878501084     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2302-4     Document Type: Article

References (40)

1. C.Y. Lee, J.W. Yoon, Y.J. Kim, and S.B. Jung, Microelectron. Eng. 82, 561 (2005).
2. J.W. Yoon, S.W. Kim, J.M. Koo, D.G. Kim, and S.B. Jung, J. Electron. Mater. 33, 1190 (2004).
3. K. Suganuma, Curr. Opin. Solid. State Mater. Sci. 5, 55 (2001).
4. K. Zeng and K. Tu, Mater. Sci. Eng. R38, 55 (2002).
5. H.T. Lee, H.S. Lin, C.S. Lee, and P.W. Chen, Mater. Sci. Eng. 407, 36 (2005).
6. G. Li and B. Chen, IEEE Trans. Compon. Packag. 26, 651 (2003).
7. K. Kim, S. Huh, and K. Suganuma, J. Alloys Compd. 352, 226 (2003).
8. K. Tu, T. Lee, J. Jang, L. Li, D. Frear, K. Zeng, and J. Kivilahti, J. Appl. Phys. 89, 4843 (2001).
9. Z. Chen, M. He, and G. Qi, J. Electron. Mater. 33, 1465 (2004).
10. C. Wang and S. Chen, Acta Mater. 54, 247 (2006).
11. S. Yang, C. Chang, M. Tsai, and C. Kao, J. Alloys Compd. 499, 149 (2010).
12. C. Ho, R. Tsai, Y. Lin, and C. Kao, J. Electron. Mater. 31, 584 (2002).
13. C. Tsai, W. Luo, C. Chang, Y. Shieh, and C. Kao, J. Electron. Mater. 33, 1424 (2004).
14. C.Y. Yu, T.K. Lee, M. Tsai, K.C. Liu, and J.G. Duh, J. Electron. Mater. 39, 2544 (2010).
15. C. Wang and H. Shen, Intermetallics 18, 616 (2010).
16. C. Ho, S. Yang, and C. Kao, J. Mater. Sci Mater. Med. 18, 155 (2007).
17. K. Hong, J. Ryu, C. Park, and J. Huh, J. Electron. Mater. 37, 61 (2008).
18. H. Chen, C. Wang, C. Yan, M. Li, and Y. Huang, J. Electron. Mater. 36, 26 (2007).
19. Y. Xia, C. Lu, J. Chang, and X. Xie, J. Electron. Mater. 35, 897 (2006).
20. C.W. Chang, S.C. Yang, C.T. Tu, and C.R. Kao, J. Electron. Mater. 36, 1455 (2007).
21. G.T. Ostrowicki, N.T. Fritz, R.I. Okereke, P.A. Kohl, and S.K. Sitaraman, IEEE Trans. Device Mater. Reliab. 12, 15 (2012).
22. X. Liu, Q. Chen, V. Sundaram, M. Simmons-Matthews, K.P. Wachtler, R.R. Tummala, and S.K. Sitaraman, IEEE Trans. Device Mater. Reliab. 12, 263 (2012).
23. P.T. Vianco, J.J. Stephens, and J.A. Rejent, IEEE Trans. Compon. Packag. A. 20, 478 (1997).
24. S. Ngoh, W. Zhou, and J. Pang, J. Electron. Mater. 37, 1843 (2008).
25. Y.C. Lin, T.Y. Shih, S.K. Tien, and J.G. Duh, J. Electron. Mater. 36, 1469 (2007).
26. C. Ho, Y. Lin, S. Yang, C. Kao, and D. Jiang, J. Electron. Mater. 35, 1017 (2006).
27. C.S. Liu, C.E. Ho, C.S. Peng, and C.R. Kao, J. Electron. Mater., 1 (2011).
28. J. Jang, P. Kim, K. Tu, D. Frear, and P. Thompson, J. Appl. Phys. 85, 8456 (1999).
29. F. Guo, J. Lee, S. Choi, J. Lucas, T. Bieler, and K. Subramanian, J. Electron. Mater. 30, 1073 (2001).
30. K. Zeng, V. Vuorinen, and J.K. Kivilahti, IEEE Trans. Compon. Packag. 25, 162 (2002).
31. S. Wang and C. Liu, J. Electron. Mater. 32, 1303 (2003).
32. C.C. Chang, Y. Lin, Y. Wang, and C. Kao, J. Alloys Compd. 492, 99 (2010).
33. T. Laurila, V. Vuorinen, and J. Kivilahti, Tu. Mater. Sci. Eng. R49, 1 (2005).
34. K. Tu and R. Thompson, Acta Mater. 30, 947 (1982).
35. P.T. Vianco, J.A. Rejent, and P.F. Hlava, J. Electron. Mater. 33, 991 (2004).
36. J.W. Yoon, W.C. Moon, and S.B. Jung, Microelectron. Eng. 83, 2329 (2006).
37. A. Kumar and Z. Chen, J. Electron. Mater. 40, 213 (2011).
38. L. Xu, J.H.L. Pang, K.H. Prakash, and T. Low, IEEE Trans. Compon. Packag. 28, 408 (2005).
39. W. Peng, E. Monlevade, and M.E. Marques, Microelectron. Reliab. 47, 2161 (2007).
40. T. Huang, H. Tseng, C. Lu, Y. Hsiao, Y. Chuang, and C. Liu, J. Electron. Mater. 39, 2382 (2010).