Erratum: Cross-interaction of interfacial reactions in Ni (Au/Ni/Cu)-SnAg-Cu solder joints during reflow soldering and thermal aging (Journal of Electronic Materials (2002) 25 (162) DOI: 10.1007/s11664-006-0005-4);Cross-interaction of interfacial reactions in Ni (Au/Ni/Cu)-SnAg-Cu solder joints during reflow soldering and thermal aging

Journal of Electronic Materials

Volumn 36, Issue 1, 2007, Pages 26-32

  Chen, H T ^a   Wang, C Q ^a   Yan, C ^b   Li, M Y ^a   Huang, Y ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Aging; Interfacial reaction; Intermetallic compounds; Intermetallic formation; Lead free solder; Solder

Indexed keywords

INTERMETALLICS; SCANNING ELECTRON MICROSCOPY; SOLDERING; SURFACE CHEMISTRY; THERMAL AGING;

INTERMETALLIC FORMATION; LEAD FREE SOLDERS; REFLOW SOLDERING; X RAY MAPPING;

SOLDERED JOINTS;

EID: 33947507039     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0242-1     Document Type: Erratum

References (26)

1. Z. Chen, M. He, and G.J. Qi, J. Electron. Mater. 33, 1465 (2004).
2. M. He, Z. Chen, and G.J. Qi, Acta Mater. 52, 2047 (2004).
3. C.E. Ho, S.Y. Tsai, and C.R. Kao, IEEE Trans. Adv. Packaging 24, 493 (2001).
4. C.H. Wang and S.W. Chen, Acte Mater. 54, 247 (2006).
5. M.N. Islam and Y.C. Chan, Mater. Sci. Eng. B 117, 246 (2005).
6. L.C. Shiau, C.E. Ho, and C.R. Kao, Soldering Surf. Mount. Technol. 14, 25 (2002).
7. K.C. Chang and K.N. Chiang, J. Electron. Mater. 33, 1373 (2004).
8. K.Y. Lee and M. Li, J. Electron. Mater. 32, 906 (2003).
9. P.O. Kim and K.N. Tu, Mater. Chem. Phys. 53, 165 (1998).
10. A. Kumar, M. He, and Z. Chen, Surf. Coating Technol. 198, 283 (2005).
11. K.N. Tu, T.Y. Lee, J.W. Jang, L. Li, D.R. Frear, K. Zeng, and J.K, Kivilahti, J. Appl. Phys. 89, 4843 (2001).
12. J.W. Jang, D.R, Frear, T.Y. Lee, and K.N. Tu, J. Appl. Phys. 88, 6359 (2000).
13. Z. Mei, M. Kaufmann, A. Eslambolchi, and P. Johnson, 48th Electronic Components and Technology Conf. (Piscataway, NJ: IEEE, 1998), pp. 952-961.
14. J. Görlich, G. Schmitz, and K.N. Tu, Appl. Phys. Lett. 86, 053106 (2005).
15. S. J. Wang and C.Y. Liu, J. Electron. Mater. 32, 1303 (2003).
16. C.M. Tsai, W.C. Luo, C.W. Chang, Y.C. Shieh, and C.R. Kao, J. Electron. Mater. 33, 1424 (2004).
17. Y.H. Xia, X.M. Xie, C.Y. Lu, and J.L. Chang, J. Alloy Compd. (in press).
18. J.Y. Tsai, Y.C. Hu, C.M. Tsai, and C.R. Kao, J. Electron. Mater. 32, 1203 (2003).
19. C.E. Ho, R.Y. Tsai, Y.L. Lin, and C.R. Kao, J. Electron. Mater. 31, 584 (2002).
20. C.E. Ho, L.C. Shiau, and C.R. Kao, J. Electron. Mater. 31, 1264 (2002).
21. A. Kumar, M. He, Z. Chen, and P.S. Teo, Thin Solid Films 462-463, 413 (2004).
22. V. Vuorinen, T. Lauriala, H. Yu, and J.K. Kivilahti, J. Appl. Phys. 99, 023530 (2006).
23. L. Buene, H. Falkenberg-Arell, J. Gjonnes, and J. Tafto, Thin Solid Films 67, 95 (1980).
24. T. Laurila, V. Vuorinen, T. Mattila, and J.K. Kivilahti, J. Electron. Mater. 34, 103 (2005).
25. J.H. Lee, J.H. Park, Y.H. Lee, and Y.S. Kim, J. Mater. Res. 16, 1249 (2001).
26. J.H. Lee, J.H. Park, D.H. Shin, Y.H. Lee, and Y.S. Kim, J. Electron. Mater. 30, 1138 (2001).