Compact model for carbon nanotube field-effect transistors including nonidealities and calibrated with experimental data down to 9-nm gate length

IEEE Transactions on Electron Devices

Volumn 60, Issue 6, 2013, Pages 1834-1843

  Luo, Jieying ^a   Wei, Lan ^b,c   Lee, Chi Shuen ^a   Franklin, Aaron D ^d   Guan, Ximeng ^a,e   Pop, Eric ^f   Antoniadis, Dimitri A ^b   Philip Wong, H S ^a  

^a Stanford University   (United States)

^b USA   (United States)

^c ALTERA CORPORATION   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

^e IBM RESEARCH   (United States)

^f University of Illinois at Urbana Champaign   (United States)

Author keywords

Carbon nanotube (CNT); carbon nanotube field effect transistor (CNFET); contact resistance; direct source to drain tunneling

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTOR (CNFET); CARBON NANOTUBES (CNT); DEVICE PERFORMANCE; EXPERIMENTAL DATUM; OFF-STATE LEAKAGE CURRENT; PARASITIC CAPACITANCE; SERIES RESISTANCES; SOURCE-TO-DRAIN TUNNELING;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CONTACT RESISTANCE; NANOSENSORS;

CARBON NANOTUBES;

EID: 84878144844     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2258023     Document Type: Article

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