Modeling and analysis of planar-gate electrostatic capacitance of 1-D FET with multiple cylindrical conducting channels

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2377-2385

  Deng, Jie ^a   Wong, H S Philip ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

1 D field effect transistors (1 D FETs); Cylindrical conducting channels; Electrostatic capacitance; Modeling; Planar gate

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTROSTATIC DEVICES; MATHEMATICAL MODELS;

CYLINDRICAL CONDUCTING CHANNELS; ELECTROSTATIC CAPACITANCE; PLANAR GATE;

FIELD EFFECT TRANSISTORS;

EID: 36849048613     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902047     Document Type: Article

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