CMOS-based carbon nanotube pass-transistor logic integrated circuits

Nature Communications

Volumn 3, Issue , 2012, Pages

  Ding, Li ^a   Zhang, Zhiyong ^a   Liang, Shibo ^a   Pei, Tian ^a   Wang, Sheng ^a   Li, Yan ^b   Zhou, Weiwei ^c   Liu, Jie ^c   Peng, Lian Mao ^a  

^a PEKING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

^c DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE; METAL OXIDE; SILICON; METAL; NANOTUBE; OXIDE;

ARTICLE; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR; DEVICES; ELECTRIC POTENTIAL; ENERGY CONSUMPTION; EQUIPMENT DESIGN; FIELD EFFECT TRANSISTOR; INTEGRATED CIRCUIT; PASS TRANSISTOR LOGIC CONFIGURATION; POWER SUPPLY; PROCEDURES; SEMICONDUCTOR; VELOCITY; CHEMISTRY; COMPUTER PROGRAM; COMPUTER SYSTEM; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PHYSICS; SCANNING ELECTRON MICROSCOPY;

COMPUTER SYSTEMS; EQUIPMENT DESIGN; MATERIALS TESTING; METALS; MICROSCOPY, ELECTRON, SCANNING; NANOTECHNOLOGY; NANOTUBES; NANOTUBES, CARBON; OXIDES; PHYSICS; SEMICONDUCTORS; SOFTWARE; TRANSISTORS, ELECTRONIC;

EID: 84863229749     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms1682     Document Type: Article

References (33)

1. Avouris, P., Chen, Z. H. & Perebeinos, V. Carbon-based electronics. Nat. Nanotechnol. 2, 605-615 (2007). (Pubitemid 47525190)
2. Rutherglen, C., Jain, D. & Burke, P. Nanotube electronics for radiofrequency applications. Nat. Nanotechnol. 4, 811-819 (2009).
3. Burghard, M., Klauk, H. & Kern, K. Carbon-based feld-efect transistors for nanoelectronics. Adv. Mater. 21, 2586-2600 (2009).
4. Heinze, S. et al. Carbon nanotubes as Schottky barrier transistors. Phys. Rev. Lett. 89, 106801 (2002).
5. Chen, Z., Appenzeller, J., Knoch, J., Lin, Y.-M. & Avouris, P. The role of metal-nanotube contact in the performance of carbon nanotube feld-efect transistors. Nano Lett. 5, 1497-1502 (2005). (Pubitemid 41084442)
6. Perello, D. et al. Anomalous Schottky barriers and contact band-to-band tunnelling in carbon nanotube transistors. ACS Nano 4, 3103-3108 (2010).
7. Zhou, X. J., Park, J. Y., Huang, S. M., Liu, J. & McEuen, P. L. Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors. Phys. Rev. Lett. 95, 146805 (2005).
8. Franklin, A. D. & Chen, Z. Length scaling of carbon nanotube transistors. Nat. Nanotechnol. 5, 858-862 (2010).
9. Javey, A., Guo, J., Wang, Q., Lundstrom, M. & Dai, H. J. Ballistic carbon nanotube feld-efect transistor. Nature 424, 654-657 (2003). (Pubitemid 36987985)
10. Javey, A. et al. Carbon nanotube feld-efect transistors with integrated ohmic contacts and high-κ gate dielectrics. Nano Lett. 4, 447-450 (2004). (Pubitemid 38402631)
11. Javey, A. et al. Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays. Nano Lett. 4, 1319-1322 (2004). (Pubitemid 39099196)
12. Zhang, Z. Y. et al. Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits. Nano Lett. 7, 3603-3607 (2007).
13. Zhang, Z. Y. et al. Self-aligned ballistic n-type single-walled carbon nanotube feld-efect transistors with adjustable threshold voltage. Nano Lett. 8, 3696-3701 (2008).
14. Ding, L. et al. Y-contacted high-performance n-type single-walled carbon nanotube feld-efect transistors: scaling and comparison with sc-contacted devices. Nano Lett. 9, 4209-4214 (2009).
15. Ding, L. et al. A self-aligned u-gate carbon nanotube feld-efect transistor with extremely small parasitic capacitance and drain induced barrier lowering. ACS Nano 5, 2512-2519 (2011).
16. Wang, Z. X. et al. Yttrium oxide as a perfect high-κ gate dielectric for carbon-based electronics. Nano Lett. 10, 2024-2030 (2010).
17. Javey, A. et al. Carbon nanotube transistor arrays for multistage complementary logic and ring oscillators. Nano Lett. 2, 929-932 (2002). (Pubitemid 135708215)
18. Derycke, V., Martel, R., Appenzeller, J. & Avouris, P. Carbon nanotube inter-and intramolecular logic gates. Nano Lett. 1, 453-456 (2001). (Pubitemid 33673964)
19. Bachtold, A. et al. Logic circuits with carbon nanotube transistors. Science 294, 1317-1320 (2001). (Pubitemid 33063092)
20. Zhang, Z. Y. et al. Almost perfectly symmetric SWCNT-based CMOS devices and scaling. ACS Nano 3, 3781-3187 (2009).
21. Chen, Z. et al. An integrated logic circuit assembled on a single carbon nanotube. Science 311, 1735 (2006).
22. Ryu, K. M. et al. CMOS-analogous wafer-scale nanotube-on-insulator approach for submicrometer devices and integrated circuits using aligned nanotubes. Nano Lett. 9, 189-197 (2009).
23. Sun, D. M. et al. Flexible high-performance carbon nanotube integrated circuits. Nat. Nanotechnol. 6, 156-161 (2011).
24. Cao, Q. et al. Medium-scale carbon nanotube thin-flm integrated circuits on fexible plastic substrates. Nature 454, 495-500 (2008).
25. Yu, W. J. et al. Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors. Nano Lett. 9, 1401-1405 (2009).
26. Yan, H. et al. Programmable nanowire circuits for nanoprocessors. Nature 470, 240-244 (2011).
27. Rabaey, J. M., Chandrakasan, A. & Nikolic, B. Digital Integrated Circuits (Prentice Hall, 2003).
28. Weste, N. H. E. & Harris, D. CMOS VLSI Design: A Circuits and System Perspective 3rd edn, (Addison Wesley, 2004).
29. Zimmermann, R. & Fichtner, W. Low-power logic styles: CMOS versus pass-transistor logic. IEEE J. Solid-State Circuits 32, 1079-1090 (1997). (Pubitemid 127580564)
30. Chao, R. et al. Benchmarking nanotechnology for high-performance and low-power logic transistor applications. IEEE Trans. Nanotechnol. 4, 153-158 (2005).
31. Sze, S. Physics of Semiconductor Devices (Wiley, 1981).
32. Guo, J. et al. Assessment of high-frequency performance potential of carbon nanotube transistors. IEEE Trans. Nanotechnol. 4, 715-721 (2005). (Pubitemid 41729632)
33. Zhou, W. W. et al. Copper catalyzing growth of single-walled carbon nanotubes on substrates. Nano Lett. 6, 2987-2990 (2006).