Enhanced performance of short-channel carbon nanotube field-effect transistors due to gate-modulated electrical contacts

ACS Nano

Volumn 6, Issue 5, 2012, Pages 4494-4499

  Cummings, Aron W ^a   Léonard, François ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Carbon nanotubes; Contacts; Transistors

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CARBON NANOTUBE TRANSISTORS; CONTACT PROPERTIES; ELECTRICAL CONTACTS; EXPERIMENTAL MEASUREMENTS; NANOTUBE ELECTRONICS; PALLADIUM CONTACTS; SCALING BEHAVIOR; SCHOTTKY BARRIERS; SHORT CHANNELS; SUBTHRESHOLD SWING;

CONTACTS (FLUID MECHANICS); NANOSENSORS; PALLADIUM; SCHOTTKY BARRIER DIODES; TRANSISTORS;

CARBON NANOTUBES;

EID: 84864192187     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn301302n     Document Type: Article

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