An analytical derivation of the density of states, effective mass, and carrier density for achiral carbon nanotubes

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 289-297

  Akinwande, Deji ^a   Nishi, Yoshio ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

Armchair carbon nanotubes (CNTs); Carrier density; CNTs; Density of states (DOS); Effective mass; Group velocity; Van Hove singularities (vHs); Zigzag CNTs

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; CARRIER CONCENTRATION; CHIRALITY; ELECTRONIC DENSITY OF STATES; MATHEMATICAL MODELS;

GROUP VELOCITY; TIGHT-BINDING MODEL; VAN-HOVE SINGULARITY;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 37749030453     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911078     Document Type: Article

References (28)

1. N. W. Ashcroft and N. D. Mermin, Solid State Physics. New York: Holt, Rinehart and Winston, 1976.
2. R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physical Properties of Carbon Nanotubes. London, U.K.: Imperial College Press, 1998.
3. W. B. Choi, D. S. Chung, J. H. Kang, H. Y. Kim, Y. W. Jin, I. T. Han, Y. H. Lee, J. E. Jung, N. S. Lee, G. S. Park, and J. M. Kim, "Fully sealed, high-brightness carbon-nanotube field-emission display," Appl. Phys. Lett., vol. 75, no. 20, pp. 3129-3131, Nov. 1999.
4. A. Javey, R. Tu, D. B. Farmer, J. Guo, R. G. Gordon, and H. J. Dai, "High performance n-type carbon nanotube field-effect transistors with chemically doped contacts," Nano Lett., vol. 5, no. 2, pp. 345-348, 2005.
5. S. Reich, C. Thomsen, and J. Maultzsch, Carbon Nanotubes: Basic Concepts and Physical Properties. Weinheim, Germany: Wiley-VCH, 2004.
6. J. W. Mintmire and C. T. White, "Universal density of states for carbon nanotubes," Phys. Rev. Lett., vol. 81, no. 12, pp. 2506-2509, Sep. 1998.
7. S. Datta, Quantum Transport: Atom to Transistor. Cambridge, U.K.: Cambridge Univ. Press, 2005.
8. A. Jorio, A. G. Souza Filho, G. Dresselhaus, M. S. Dresselhaus, R. Saito, J. H. Hafner, C. M. Lieber, F. M. Matinaga, M. S. S. Dantas, and M. A. Pimenta, "Joint density of electronic states for one isolated single-wall carbon nanotube studied by resonant Raman scattering," Phys. Rev. B, Condens. Matter, vol. 63, p. 245-416, 2001.
9. C. T. White and J. W. Mintmire, "Density of states reflects diameter in nanotubes," Nature, vol. 394, no. 6688, pp. 29-30, Jul. 1998.
10. A. Hazeghi, T. Krishnamohan, and H. S. P. Wong, "Schottky-barrier carbon nanotube field-effect transistor modeling," IEEE Trans. Electron Devices, vol. 54, no. 3, pp. 439-445, Mar. 2007.
11. J. Deng and H.-S. P. Wong, "A compact SPICE model for carbon nanotube field effect transistors including non-idealities and its application Part II: Full device model and circuits performance benchmarking," IEEE Trans. Electron Devices, vol. 54, no. 12, Dec. 2007.
12. O. Gülseren, T. Yildirim, and S. Ciraci, "Systematic ab initio study of curvature effects in carbon nanotubes," Phys. Rev. B, Condens. Matter, vol. 65, no. 15, p. 153-405, Apr. 2002.
13. R. A. Jishi, J. Bragin, and L. Lou, "Electronic structure of short and long carbon nanotubes from first principles," Phys. Rev. B, Condens. Matter, vol. 59, no. 15, pp. 9862-9865, Apr. 1999.
14. A. Rochefort, D. R. Salahub, and P. Avouris, "Effects of finite length on the electronic structure of carbon nanotubes," J. Phys. Chem., B vol. 103, no. 4, pp. 641-646, 1999.
15. D. J. Klein, H. Y. Zhu, T. G. Schmalz, A. Rubio, and N. H. March, "Geometric boundary effects on the electronic properties of finite carbon nanotubes," J. Phys. Chem. Solids, vol. 59, no. 3, pp. 417-423, 1998.
16. H. Kataura, Y. Kumazawa, Y Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, and Y. Achiba, "Optical properties of single-wall carbon nanotubes," Synth. Met., vol. 103, no. 1, pp. 2555-2558, Jun. 1999.
17. R. Saito, G. Dresselhaus, and M. S. Dresselhaus, "Trigonal warping effect of carbon nanotubes," Phys. Rev. B, Condens. Matter, vol. 61, no. 4, pp. 2981-2990, Jan. 2000.
18. S. Ilani, L. A. K. Donev, M. Kindermann, and P. L. McEuen, "Measurement of the quantum capacitance of interacting electrons in carbon nanotubes," Nat. Phys., vol. 2, pp. 687-691, 2006.
19. F. Kreup, A. P. Graham, M. Liebau, G. S. Duesberg, R. Seidel, and E. Unger, "Carbon nanotubes for interconnect applications," in IEDM Tech. Dig., 2004, pp. 683-686.
20. S. O. Koswatta, N. Neophytou, D. Kienle, G. Fiori, and M. S. Lundstrom, "Dependence of dc characteristics of CNT MOSFETs on bandstructure models," IEEE Trans. Nanotechnol., vol. 5, no. 4, pp. 368-372, Jul. 2006.
21. K. Natori, Y. Kimura, and T. Shimizu, "Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor," J. Appl. Phys., vol. 97, no. 3, pp. 034 306-1-034 306-7, 2005.
22. A. Raychowdhury, A. Keshavarzi, J. Kurtin, V. De, and K. Roy, "Carbon nanotube field-effect transistors for high-performance digital circuits; dc analysis and modeling toward optimum transistor structure," IEEE Trans. Electron Devices, vol. 53, no. 11, pp. 2711-2717, Nov. 2006.
23. R. E Pierret, Semiconductor Device Fundamentals. Reading, MA: Addison-Wesley, 1996.
24. M. Abramowitz and I. A. Stegun, Handbook of Mathematical Functions With Formulas, Graphs, and Mathematical Tables. Washington, DC: U.S. Dept. Commerce: U.S. G.P.O., 1972. 10th printing, with corrections ed.
25. J. Guo, A. Javey, H. Dai, and M. Lundstrom, "Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors," in IEDM Tech. Dig., 2004, pp. 703-706.
26. C. Kittel and H. Kroemer, Thermal Physics, 2nd ed. San Francisco, CA: Freeman, 1980.
27. K. Hata, D. N. Futaba, K. Mizuno, T. Namai, M. Yumura, and S. Iijima, "Water-assisted highly efficient synthesis of impurity-free single-walled carbon nanotubes," Science, vol. 306, no. 5700, pp. 1362-1364, Nov. 2004.
28. I. W. Chiang, B. E. Brinson, R. E. Smalley, J. L. Margrave, and R. H. Hauge, "Purification and characterization of single-wall carbon nanotubes, " J. Phys. Chem., B, vol. 105, no. 6, pp. 1157-1161, 2001.