Zener tunneling in semiconducting nanotube and graphene nanoribbon p-n junctions

Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

  Jena, Debdeep ^a   Fang, Tian ^a   Zhang, Qin ^a   Xing, Huili ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBON NANOTUBES; ELECTRON TUNNELING; EXCAVATION; FIELD EFFECT TRANSISTORS; NANOPORES; NANOSTRUCTURES; NANOTUBES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS;

BAND-GAPS; CARBON STRUCTURES; CARBON-BASED; CHARACTERISTIC LENGTHS; ENERGY SCALING; GRAPHENE NANORIBBON; III-V SEMICONDUCTORS; INTERBAND TUNNELING; NANO TUBE; ONE-DIMENSIONAL STRUCTURES; P-N JUNCTION DIODES; P-N JUNCTIONS; TUNNELING CURRENTS; TUNNELING PROBABILITIES; ZENER TUNNELING;

TUNNELING (EXCAVATION);

EID: 52349102582     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2983744     Document Type: Article

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