Material selection for minimizing direct tunneling in nanowire transistors

IEEE Transactions on Electron Devices

Volumn 59, Issue 8, 2012, Pages 2064-2069

  Sylvia, Somaia Sarwat ^a   Park, Hong Hyun ^b,c   Khayer, M Abul ^d   Alam, Khairul ^e   Klimeck, Gerhard ^b   Lake, Roger K ^a  

^a University of California Riverside   (United States)

^b Purdue University   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d INTEL CORPORATION   (United States)

^e EAST WEST UNIVERSITY   (Bangladesh)

Author keywords

Carbon nanotube (CNT); field effect transistors (FETs); GaAs; GaN; Ge; InAs; InP; InSb; leakage; nanowire (NW); Si; tunneling

Indexed keywords

GAAS; GAN; INAS; INP; INSB;

CARBON NANOTUBES; CONDUCTION BANDS; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; GALLIUM NITRIDE; GERMANIUM; INDIUM ANTIMONIDES; INDIUM ARSENIDE; LEAKAGE (FLUID); SEMICONDUCTING GALLIUM; SILICON;

NANOWIRES;

EID: 84864755601     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2200688     Document Type: Article

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