Scalable carbon nanotube computational and storage circuits immune to metallic and mispositioned carbon nanotubes

IEEE Transactions on Nanotechnology

Volumn 10, Issue 4, 2011, Pages 744-750

  Patil, Nishant ^a   Lin, Albert ^a   Zhang, Jie Jerry ^a   Wei, Hai ^a   Anderson, Kyle ^a   Wong, Philip H S ^a   Mitra, Subhasish ^a  

^a Stanford University   (United States)

Author keywords

Carbon nanotube field effect transistors (CNFETs); CNFET combinational and sequential circuits; metallic carbon nanotubes (CNTs); very large scale integration (VLSI) compatible metallic CNT removal

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CNFET COMBINATIONAL AND SEQUENTIAL CIRCUITS; DIGITAL SYSTEM; FUNDAMENTAL BUILDING BLOCKS; HALF-ADDER; METALLIC CARBON NANOTUBES; VERY LARGE SCALE INTEGRATION (VLSI)-COMPATIBLE METALLIC CNT REMOVAL; VERY LARGE-SCALE INTEGRATION;

CARBON NANOTUBES; DIGITAL CIRCUITS; FIELD EFFECT TRANSISTORS; FLIP FLOP CIRCUITS; SEQUENTIAL CIRCUITS;

VLSI CIRCUITS;

EID: 79960281144     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2076323     Document Type: Article

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